Page 1
Transistor
2.8
+0.2
–0.3
1.5
+0.25
–0.050.65±0.15 0.65±0.15
3
1
2
0.950.95
1.9±0.2
0.4
+0.1
–0.05
1.1
+0.2
–0.1
0.8
0.4±0.2
0 to 0.1
0.16
+0.1
–0.06
1.45
0.1 to 0.3
2.9
+0.2
–0.05
2SC3704
Silicon NPN epitaxial planer type
For UHF band low-noise amplification
Features
■
●
Low noise figure NF.
●
High gain.
●
High transition frequency fT.
●
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
15
10
2
80
200
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
Unit: mm
1:Bae JEDEC:TO–236
2:Emitter EIAJ:SC–59
3:Collector Mini T ype Package
Marking symbol :2W
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Transition frequency
Collector output capacitance
Noise figure
Maximum unilateral power gain
Foward transfer gain
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
f
T
C
ob
NF
GUM
| S
|
21e
VCB = 15V, IE = 0
VEB = 1V, IC = 0
VCE = 8V, IC = 20mA
VCE = 1V, IC = 3mA
VCE = 8V, IC = 20mA, f = 0.8GHz
VCE = 10V, IE = 0, f = 1MHz
VCE = 8V, IC = 7mA, f = 800MHz
VCE = 8V, IC = 20mA, f = 800MHz
2
VCE = 8V, IC = 20mA, f = 800MHz
Conditions
min
50
80
typ
150
6
0.7
1.0
14
13
max
1
1
300
280
1.2
1.7
Unit
µA
µA
GHz
pF
dB
dB
dB
1
Page 2
Transistor
2SC3704
PC — Ta IC — V
240
)
mW
200
(
C
160
120
80
40
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
V
— I
CE(sat)
)
100
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
Ta=75˚C, 25˚C, –25˚C
0.1 1 10 1000.3 3 30
Collector current IC (mA
)
C
IC/IB=10
)
CE
60
50
)
mA
(
40
C
30
20
Collector current I
10
0
012108264
IB=400µA
350µA
300µA
250µA
200µA
150µA
100µA
50µA
Collector to emitter voltage VCE (V
hFE — I
C
600
FE
500
400
300
200
100
Forward current transfer ratio h
0
0.1 1 10 1000.3 3 30
Ta=75˚C
25˚C
–25˚C
Collector current IC (mA
Ta=25˚C
VCE=8V
)
120
100
)
mA
(
80
C
60
40
Collector current I
20
0
02.01.60.4 1.20.8
)
Base to emitter voltage VBE (V
12
)
10
GHz
(
T
8
6
4
2
Transition frequency f
0
0.1 1 10 1000.3 3 30
IC — V
BE
VCE=8V
25˚C
Ta=75˚C –25˚C
fT — I
C
VCE=8V
f=800MHz
Ta=25˚C
Collector current IC (mA
)
)
)
pF
(
Cob — V
2.4
2.0
ob
1.6
1.2
0.8
0.4
CB
Collector output capacitance C
0
0.1 1 10 1000.3 3 30
Collector to base voltage VCB (V
2
IE=0
f=1MHz
Ta=25˚C
GUM — I
24
)
dB
(
20
16
12
8
4
Maximum unilateral power gain GUM
0
0.1 1 10 1000.3 3 30
)
Collector current IC (mA
C
VCE=8V
f=800MHz
Ta=25˚C
NF — I
C
)
dB
(
6
5
4
3
2
VCE=8V
(R
=50W)
g
f=800MHz
Ta=25˚C
Noise figure NF
1
0
0.1 1 10 1000.3 3 30
)
Collector current IC (mA
)
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