Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3690
DESCRIPTION
·Low Collector Saturation Voltage
: V
CE(sat)
·Collector-Emitter Sustaining Voltage-
: V
CEO(SUS)
·High Switching Speed
APPLICATIONS
·Designed for high speed and power switching applications
ABSOLUTE MAXIMUM RATINGS(T
= 0.5V(Max)@ IC= 3A
= 60V (Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
I
B
C
Collector-Base Voltage 100 V
Collector-Emitter Voltage 60 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 3 A
Collector Current-Peak 6 A
B Base Current-Continuous 1.5 A
Collector Power Dissipation
=25℃
@ T
C
Collector Power Dissipation
=25℃
@ T
a
15
W
2
T
J
T
stg
Junction Temperature 150
Storage Temperature Range -55~150
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3690
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CE(sat)-1
V
CE(sat) -2
V
BE(sat) -1
V
BE(sat) -2
I
CBO
I
CEX
I
EBO
h
FE-1
h
FE-2
Collector-Emitter Sustaining Voltage IC= 2A; IB= 0.2A, L= 1mH B 60 V
Collector-Emitter Saturation Voltage IC= 2A; IB= 0.1A B 0.3 V
Collector-Emitter Saturation Voltage IC= 3A; IB= 0.15A B 0.5 V
Base-Emitter Saturation Voltage IC= 2A; IB= 0.1A B 1.2 V
Base-Emitter Saturation Voltage IC= 3A; IB= 0.15A B 1.5 V
Collector Cutoff Current VCB= 60V; IE= 0 10
= 60V; VBE= -1.5V
V
Collector Cutoff Current
Emitter Cutoff Current VEB= 5V; IC= 0 10
DC Current Gain IC= 0.3A ; VCE= 2V 100
DC Current Gain IC= 0.6A ; VCE= 2V 100 200 400
CE
=125℃
T
a
10
1.0
μA
μA
mA
μA
h
FE-3
DC Current Gain IC= 2A ; VCE= 2V 60
h
classifications
FE-2
M L K
100-200 150-300 200-400
isc Website：www.iscsemi.cn
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