Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3658
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
·Built-in damper diode
APPLICATIONS
·For color TV horizontal deflection output
applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
EBO
IC Collector current 5 A
ICM Collector current-peak 6 A
PC Collector power dissipation
Collector-base voltage Open emitter 1500 V
Emitter-base voltage Open collector 6 V
℃)
T
=25℃
C
50 W
Tj Junction temperature 150
T
Storage temperature -45~150
stg
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3658
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Collector-emitter saturation voltage IC=5A; IB=1.25A 2.0 V
CEsat
V
Base-emitter saturation voltage IC=5A; IB=1.25A 1.5 V
BEsat
I
Collector cut-off current VCB=1200V; IE=0 0.5 mA
CBO
I
Emitter cut-off current VEB=6V; IC=0 500 mA
EBO
h
DC current gain IC=1A ; VCE=5V 8
FE
V
Diode forward voltage IF=6A 2.0 V
ECF
tf Fall time IC=5A ; IB1=1A;IB2=-2.5A;LB=0 0.5 μs
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3658
PACKAGE OUTLINE
3
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
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