Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3657
DESCRIPTION
·High Collector-Emitter Breakdown Voltage : V
·Fast Switching Speed
APPLICATIONS
·Switching regulator and high voltage switching applications
·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(T
(BR)CEO
= 800V(Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
I
P
CBO
CEO
EBO
I
C
CM
I
B
BM
C
T
J
Collector-Base Voltage 900 V
Collector-Emitter Voltage 800 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 4 A
Collector Current-Peak 8 A
B Base Current-Continuous 2 A
Base Current-Peak 5 A
Collector Power Dissipation
@ TC=25℃
Junction Temperature 150 ℃
80 W
T
stg
Storage Temperature Range -55~150 ℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3657
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
CE(
V
BE(
I
CBO
I
EBO
h
FE
Switching times
t
r
t
stg
Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 800 V
Collector-Base Breakdown Voltage IC= 1mA; IE= 0 900 V
Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A B 1.0 V
)
sat
Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A B 1.5 V
)
sat
Collector Cutoff Current VCB= 800V; IE= 0 100 μA
Emitter Cutoff Current VEB= 7V; IC= 0 1 mA
DC Current Gain IC= 1A; VCE= 5V 10
Rise Time 1.0 μs
Storage Time 2.5 μs
I
= 1A; IB1= -IB2= -0.4A;
C
RL= 400Ω; VCC≈ 400V
t
f
Fall Time
1.0 μs
h
Classifications
FE-1
K L M
10-20 15-30 20-40
isc Website：www.iscsemi.cn
2
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