Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3627
DESCRIPTION ·
·With TO-220Fa package
·High collector breakdown voltage
APPLICATIONS
·Switching regulator and high voltage
switching applications
·High speed DC-DC converter applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter 250 V
CBO
V
Collector-emitter voltage Open base 200 V
CEO
V
Emitter-base voltage Open collector 7 V
EBO
IC Collector current 10 A
ICM Collector current-peak 15 A
IB Base current 2 A
PC Collector power dissipation
Ta=25℃
=25℃
T
C
2.0
W
30
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3627
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
Switching times
tr Rise time 1.0 μs
ts Storage time 2.5 μs
Collector-emitter breakdown voltage IC=10mA; IB=0 200 V
Collector-base breakdown voltage IC=1mA; IE=0 250 V
Collector-emitter saturation voltage IC=5 A;IB=0.5 A 1.0 V
Base-emitter saturation voltage IC=5 A;IB=0.5 A 1.5 V
Collector cut-off current VCB=200V ;IE=0 100 μA
Emitter cut-off current VEB=7V ;IC=0 1 mA
DC current gain IC=10mA ; VCE=5V 15
DC current gain IC=5A ; VCE=5V 20 80
V
≈150V,RL=25Ω
CC
=-IB2=0.6 A
I
B1
tf Fall time
2
1.0 μs
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3627
PACKAGE OUTLINE
3
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
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