Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3626
DESCRIPTION ·
·With TO-220Fa package
·High collector breakdown voltage
·Excellent switching times
APPLICATIONS
·Switching regulator and high voltage
switching applications
·High speed DC-DC converter applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter 500 V
CBO
V
Collector-emitter voltage Open base 400 V
CEO
V
Emitter-base voltage Open collector 7 V
EBO
IC Collector current 8 A
ICM Collector current-peak 10 A
IB Base current 4 A
PC Collector power dissipation
Ta=25℃
=25℃
T
C
2.0
W
40
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3626
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
Collector-emitter breakdown voltage IC=10mA; IB=0 400 V
Collector-base breakdown voltage IC=1mA; IE=0 500 V
Collector-emitter saturation voltage IC=4 A;IB=0.8 A 1.0 V
Base-emitter saturation voltage IC=4 A;IB=0.8 A 1.5 V
Collector cut-off current VCB=400V ;IE=0 100 μA
Emitter cut-off current VEB=7V ;IC=0 1 mA
DC current gain IC=1A ; VCE=5V 15
DC current gain IC=4A ; VCE=5V 10
Switching times
tr Rise time 1.0 μs
V
≈200V,RL=50Ω
ts Storage time 2.5 μs
CC
=4A ;IB1=-IB2=0.4 A
I
C
tf Fall time
1.0 μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3626
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
Loading...