Page 1
DATA SHEET
SILICON TRANSISTOR
NPN EPITAXIAL SILICON TRANSISTOR
FOR MICROWAVE LOW-NOISE AMPLIFICATION
2SC3603
The 2SC3603 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 4.0 GHz. This transistor has low-noise
and high-gain characteristics in a wide collector current region, and
has a wide dynamic range.
FEATURES
• Low noise : NF = 2.1 dB TYP. @ f = 2.0 GHz
• High power gain: G
ABSOLUTE MAXIMUM RATINGS (TA = 25
PARAMETER SYMBOL RATING UNIT
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 12 V
Emitter to Base Voltage VEBO 3V
Collector Current IC 100 mA
Total Power Dissipation PT (TC = 25 °C) 580 mW
Junction Temperature Tj 200 °C
Storage Temperature Tstg
A = 10 dB TYP. @ f = 2.0 GHz
°°
°C)
°°
-
65 to +150 °C
PACKAGE DIMENSIONS (in mm)
E
3.8 MIN.
3.8 MIN.
CB
E
2.55 ± 0.2
2.1
φ
3.8 MIN.
3.8 MIN.
0.5 ± 0.05
0.5 ± 0.05
45 °
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
0.55
1.8 MAX.
+0.06
-0.03
0.1
ELECTRICAL CHARACTERISTICS (TA = 25
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 10 V, IE = 0 1.0
Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 1.0
DC Current Gain hFE VCE = 10 V, IC = 20 mA Pulse 50 120 300
Gain Bandwidth Product fT VCE = 10 V, IC = 20 mA 7 GHz
Reverse Transfer Capacitance Cre VCB = 10 V, IE = 0, f = 1 MHz 0.5 1.0 pF
Noise Figure NF
Insertion Gain |S21e|2VCE = 10 V, IC = 20 mA, f = 2 GHz 7.0 9.0 dB
Maximum Available Gain MAG VCE = 10 V, IC = 20 mA, f = 2 GHz 10.0 12.0 dB
Power Gain GA VCE = 10 V, IC = 7 mA, f = 2 GHz 10 dB
Document No. P11674EJ1V0DS00 (1st edition)
Date Published August 1996 P
Printed in Japan
Note
°°
°C)
°°
VCE = 10 V, IC = 7 mA, f = 2 GHz 2.1 3.4 dB
©
µ
A
µ
A
1996
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Note Test block diagram
Coax. SW Coax. SW
Noise Diode
Stub
Tuner
Bias
Tee
Transistor
Under
Test
Bias
Tee
Post Amp Mixer
Network
Analyzer
2SC3603
NF Meter
Coax. SW
Sweeper
TYPICAL CHARACTERISTICS (TA = 25
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
0.8
0.6
0.4
0.2
- Total Power Dissipation - W
T
P
0
with heat sink
R
th(j−e)
90 °C/W
R
th(j−a)
590 °C/W
50 100
A
- Ambient Temperature - °C
T
150 0.1
°°
°C)
°°
*
To test 1 GHz or lower, insert a bandpass filter.
*
MAG AND INSERTION GAIN vs.
FREQUENCY
25
20
15
10
5
- Insertion Gain - dB
2
|
21e
0
MAG - Maximum Available Gain - dB
|S
−5
0.2 0.5 1
MAG
2
|S
21e
|
f - Frequency - GHz
CE
= 10 V
V
I
C
= 20 mA
2510200
REVERSE TRANSFER CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
3
2
1
0.7
0.5
0.3
0.2
- Reverse Transfer Capacitance - pF
re
C
0.1
1235
V
CB
- Collector to Base Voltage -V
2
f = 1.0 MHz
710 2030
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
100
50
- DC Current Gain
FE
h
20
10
0.5 1 5
I
C
- Collector Current - mA
VCE = 10 V
10 50
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2SC3603
INSERTION GAIN vs.
COLLECTOR CURRENT
VCE = 10 V
20
18
16
14
12
10
8
- Insertion Gain - dB
2
|
6
21e
|S
4
2
0
12 5
IC - Collector Current - mA
GAIN BANDWIDTH PRODUCT vs.
30
20
COLLECTOR CURRENT
f = 0.5 GHz
f = 1 GHz
f = 2 GHz
10 20 50
VCE = 10 V
NOISE FIGURE vs. COLLECTOR CURRENT
6
5
4
3
NF - Noise Figure -dB
2
1
2 5 10 20 50
IC - Collector Current - mA
VCE =10 V
f = 2 GHz
10
7
5
3
2
- Gain Bandwidth Product - GHz
T
f
12357102030
IC - Collector Current - mA
S PARAMETER
CE = 10 V, IC = 20 mA, ZO = 50 Ω
V
f (MHz) |S
500 .629
11| ∠S11 |S21| ∠S21 |S12| ∠S12 |S22| ∠S22
-
160.8 10.100 92.6 .040 41.5 .256
1000 .631 175.8 5.411 75.1 .048 51.4 .244
1500 .628 162.5 3.565 60.6 .070 59.2 .232
2000 .646 152.2 2.720 48.4 .086 56.0 .220
2500 .659 142.1 2.161 38.8 .105 52.2 .213
3000 .677 132.0 1.916 25.7 .127 45.1 .217
3500 .695 123.8 1.585 14.3 .151 39.7 .232
4000 .713 116.5 1.392 5.3 .168 34.8 .254
-
-
-
-
-
-
103.1
-
119.5
-
134.0
49.0
57.2
66.8
77.4
89.1
3
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S PARAMETER
2SC3603
S
11e
, S
22e
− FREQUENCY VCE = 10 V
0.09
0.08
0.42
120
0.07
0.43
130
0.06
0.05
0.45
R
0.04
O
T
0.46
A
150
L
E
N
E
G
0.03
D
R
R
W
O
T
0.02
S
H
T
G
N
E
L
E
0.01
V
A
W
0
0
0.49
0.48
E
0.47
0.2
M
S
E
E
R
G
E
0.48
D
N
I
0.1
T
N
E
I
C
I
0.49
F
F
E
O
C
0
N
O
I
T
C
E
L
D
F
A
E
O
R
0.01
L
F
0.1
D
O
R
E
A
L
W
G
O
N
T
0.02
A
S
T
H
N
T
160
E
0.2
G
-
N
E
0.03
L
E
0.47
V
A
W
150
-
0.04
0.46
0.05
0.45
0.44
140
0.3
E
V
I
T
A
G
0.1
N
O
P
M
O
0.3
0.44
0.4
E
C
N
A
T
C
A
+JX
E
R
S
0.5 GHz
C
E
C
N
A
T
C
A
E
0.4
140
-
0.06
0.43
0.5
T
N
E
N
O
P
M
O
C
O
Z
11e
0.2
0.3
O
Z
JX
-
R
E
V
I
T
A
G
E
M
0.5
130
-
0.07
0.08
0.42
0.10
0.40
0.41
110
0.7
0.6
4 GHz
0.4
0.5
RESTSTANCE COMPONENT
4 GHz
0.6
120
-
0.7
110
-
0.09
0.41
0.40
0.11
0.39
0.6
0.8
0.10
0.13
0.12
0.35
100
0.9
0.8
0.7
0.8
R
ZO
S
0.9
100
-
0.11
0.39
0.14
0.36
80
1.2
0.6
0.8
0.8
0.6
0.4
1.2
1.4
0.6
0.5 GHz
0.8
0.6
0.4
0.2
1.2
0.13
0.37
0.15
0.16
0.35
0.34
70
1.4
1.0
1.0
1.6
1.8
2.0
1.0
1.0
0.8
1.4
-
80
0.14
0.36
0.17
0.33
60
1.8
2.0
3.0
4.0
2.0
1.8
-
1.6
60
-
70
0.16
0.34
0.15
0.35
0.37
90
1.0
0.2
0.4
0.2
0.9
1.0
0.2
22e
0.4
1.0
-
90
0.12
0.38
0.18
0.32
50
5.0
-
50
0.18
0.17
0.33
I
C
= 20 mA
500 MHz Step
0.19
0.31
0.20
40
0.30
0.21
3.0
0.29
30
4.0
0.28
20
5.0
10
10
20
50
102050
50
20
-
10
10
-
20
5.0
4.0
-
0.21
30
0.29
3.0
0.20
-
0.30
40
0.19
0.31
0.32
0.22
0.23
0.27
0.24
0.26
0.25
0.25
0
0.24
0.26
0.23
0.27
0.22
0.28
180°
150°
−150°
S
21
− FREQUENCY
−120°
90°
0.5 GHz
−90°
150°
−150°
S
12
− FREQUENCY
120°120°
−120°
90°
VCC = 10 V
I
C
= 20 mA
500 MHz Step
60°
30°
4 GHz
5 0.1 0.20.05 0.15
−60°
0°
10
−30°
−90°
0.5 GHz
VCE = 10 V
I
C
= 20 mA
500 MHz Step
60°
4 GHz
−60°
30°
0°180°
−30°
4
Page 5
[MEMO]
2SC3603
5
Page 6
[MEMO]
2SC3603
6
Page 7
[MEMO]
2SC3603
7
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2SC3603
The export of this product from Japan is prohibited without governmental license. To export or re-export this product from
a country other than Japan may also be prohibited without a license from that country. Please call an NEC sales
representative.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96.5
6
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