Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistors 2SC3590
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
(BR)CEO
·Fast Switching Speed
·Low Saturation Voltage
APPLICATIONS
·Designed for high definition CRT display horizontal deflection
output applications.
ABSOLUTE MAXIMUM RATINGS(T
= 150V(Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
T
CBO
CEO
EBO
I
C
CM
I
B
T
J
Collector-Base Voltage 330 V
Collector-Emitter Voltage 150 V
Emitter-Base Voltage 6 V
Collector Current-Continuous 7 A
Collector Current-Peak 12 A
B Base Current-Continuous 4 A
Total Power Dissipation
@ TC=25℃
Junction Temperature 150
50 W
℃
T
stg
Storage Temperature Range -55~150
isc Website：www.iscsemi.cn
℃
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistors 2SC3590
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CE(
V
BE(
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
Collector-Base Breakdown Voltage IC= 1mA; IE= 0 330 V
Collector-Emitter Breakdown Voltage IC= 1mA; RBE= ∞ 150 V
Emitter-Base Breakdown Voltage IE= 1m A; IC= 0 6 V
Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 0.8 V
)
sat
Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.5 V
)
sat
Collector Cutoff Current VCB= 180V; IE= 0 100 μA
Emitter Cutoff Current VEB= 5V; IC= 0 100 μA
DC Current Gain IC= 1A; VCE= 1V 15
DC Current Gain IC= 5A; VCE= 1V 10 50
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V 40 MHz
t
f
Fall Time IC= 5A, IB1= -IB2= 0.5A 0.3 μs
isc Website：www.iscsemi.cn
2
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