Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3577
DESCRIPTION ·
·With TO-3PFa package
·High breakdown voltage
·High speed
APPLICATIONS
·For high speed switching applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 5 A
ICM Collector current-peak 10 A
IB Base current 3 A
PC Collector power dissipation
Collector-base voltage Open emitter 850 V
Collector-emitter voltage Open base 650 V
Emitter-base voltage Open collector 7 V
℃)
TC=25℃ 80
T
=25℃ 3
a
W
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3577
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat
V
BEsat
I
CES
I
EBO
h
FE-1
h
FE-2
fT Transition frequency IC=0.5A ; VCE=5V 6 MHz
Switching times
ton Turn-on time 1.0 μs
t
stg
Collector-emitter sustaining voltage IC=0.5A;L=50mH 650 V
Collector-emitter saturation voltage IC=3A ;IB=0.6A 1.5 V
Base-emitter saturation voltage IC=3A ;IB=0.6A 1.5 V
Collector cut-off current VCB=800V; VBE=0 50 μA
Emitter cut-off current VEB=7V; IC=0 50 μA
DC current gain IC=10mA ; VCE=5V 10
DC current gain IC=3A ; VCE=5V 6
I
=3A; VCC=250V
Storage time 2.5 μs
C
I
=0.6A;IB2=-1.2A
B1
tf Fall time
2
0.5 μs
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3577
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
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