Page 1
SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3571
DESCRIPTION
·· With TO-220Fa package
·Low collector saturation voltage
·High switching speed
APPLICATIONS
·Switching regulator
·DC-DC converter
·High frequency power amplifier
PINNING
PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings (Ta=25)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter 500 V
CBO
V
Collector-emitter voltage Open base 400 V
CEO
V
Emitter-base voltage Open collector 7 V
EBO
I
C
ICM Collector current-Peak 15 A
I
B
P
T
Collector current (DC) 7 A
Base current 3.5 A
Total power dissipation TC=25 30 W
T
j
T
stg
Junction temperature 150
Storage temperature -55~150
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SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3571
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
CEX
I
EBO
h
FE-1
h
FE -2
h
FE -3
Collector-emitter sustaining voltage IC=3.0A , IB=0.6A,L=1mH 400 V
Collector-emitter saturation voltage IC=3A; IB=0.6A 1.0 V
Base-emitter saturation voltage IC=3A; IB=0.6A 1.2 V
Collector cut-off current VCB=400V; IE=0 10 µA
Collector cut-off current
V
CE
Ta=125
10
1.0
µA
mA
=400V; VBE=-1.5V
Emitter cut-off current VEB=5V; IC=0 10 µA
DC current gain IC=0.1A ; VCE=5V 20 80
DC current gain IC=1A ; VCE=5V 20 80
DC current gain IC=3A ; VCE=5V 10
Switching times
ton
t
t
h
s
f
Turn-on time 1.0 µs
Storage time 2.5 µs
Fall time
classifications
FE-2
M L K
20-40 30-60 40-80
I
=3.0A;IB1=-IB2=0.6A
C
A150V; RL=50C
V
CC
1.0 µs
2
Page 3
SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3571
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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