Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3570
DESCRIPTION
·Collector-Emitter Sustaining Voltage
: V
CEO(SUS)
·Low Collector Saturation Voltage
·Fast Switching Speed
APPLICATIONS
·Designed for switching regulator, DC-DC converter and
high frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
= 400V(Min.)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
T
CBO
CEO
EBO
I
C
CM
I
B
Collector-Base Voltage 500 V
Collector-Emitter Voltage 400 V
Emitter-Base Voltage 8 V
Collector Current-Continuous 5 A
Collector Current-Peak 10 A
B Base Current-Continuous 2.5 A
Total Power Dissipation
C
@ TC=25℃
Junction Temperature 150 ℃
J
25 W
T
stg
Storage Temperature Range -55~150 ℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3570
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
V
CEO(SUS)
V
CEX(SUS)-1
V
CEX(SUS)-2
V
CE
(sat)
V
BE
(sat)
I
CBO
I
CER
I
CEX
I
EBO
h
FE-1
h
FE-2
Collector-Emitter Sustaining Voltage IC= 2.0A ; IB= 0.4A, L= 1mH 400 V
I
= 2.0A ; IB1=-IB2= 0.4A,
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A B 1.0 V
Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A B 1.2 V
Collector Cutoff Current VCB= 400V; IE= 0 10 μA
Collector Cutoff Current VCE= 400V; RBE= 51Ω, Ta=125℃ 1.0 mA
Collector Cutoff Current
Emitter Cutoff Current VEB= 5V; IC=0 10 μA
DC Current Gain IC= 0.5A; VCE= 5V 20 80
DC Current Gain IC= 2.0A; VCE= 5V 10
C
L=180μH,clamped
I
= 4A; IB1= 0.8A; IB2= -0.4A,
C
L= 180μH,clamped
V
= 400V; V
CE
VCE= 400V; V
= -1.5V
BE(off)
= -1.5V, Ta=125℃
BE(off)
450 V
400 V
10
1.0
μA
mA
Switching times
Turn-on Time 1.0 μs
Storage Time 2.0 μs
Fall Time
IC= 2A ,RL= 75Ω,
= -IB2= 0.4A, VCC≈ 150V
I
B1
Classifications
h
t
on
t
stg
t
f
FE-2
M L K
20-40 30-60 40-80
isc Website：www.iscsemi.cn
2
0.7 μs
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