Page 1
Inchange Semiconductor Product SpecificationI
Silicon NPN Power Transistors 2SC3569
DESCRIPTION ·
·With TO-220F package
·Low collector saturation voltage
APPLICATIONS
·High speed switching applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 2 A
ICM Collector current-peak 4 A
IB Base current 1 A
Collector-base voltage Open emitter 500 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 7 V
PC Collector power dissipation TC=25℃ 15 W
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3569
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
Collector-emitter sustaining voltage IC=0.5A; IB=0.1A;L=1mH 400 V
Collector-emitt er saturation voltage IC=0.5 A;IB=0.1A 1.0 V
Base-emitter saturation voltage IC=0.5 A;IB=0.1A 1.2 V
Collector cut-off current VCB=400V; IE=0 10
Emitter cut-off current VEB=5V; IC=0 10
μA
μA
DC current gain IC=0.1A ; VCE=5V 20 80
DC current gain IC=0.5A ; VCE=5V 10
Switching times
ton Turn-on time 1.0
=0.5A;RL=300Ω
I
ts Storage time 2.5
C
=- IB2=0.1A
I
B1
=150V
V
CC
μs
μs
tf Fall time
h
classifications
FE-1
R O Y
20-40 30-60 40-80
1.0
μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3569
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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