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INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3566
DESCRIPTION
·Low Collector Saturation Voltage
·Fast Switching Speed
APPLICATIONS
·Designed for high-speed switching, and is ideal for use
as a driver in devices such as switching reglators,DC/DC
converters, and high frequency power amplifiers.
ABSOLUTE MAXIMUM RATINGS(T
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
T
CBO
CEO
EBO
I
C
CM
I
B
Collector-Base Voltage 80 V
Collector-Emitter Voltage 60 V
Emitter-Base Voltage 12 V
Collector Current-Continuous 5 A
Collector Current-Peak 10 A
B Base Current-Continuous 2.5 A
Collector Power Dissipation
@ Ta=25℃
C
Total Power Dissipation
@ TC=25℃
Junction Temperature 150 ℃
J
1.5
25
W
T
stg
Storage Temperature Range -55~150 ℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3566
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
V
CEO(SUS)
V
CEX(SUS)-1
V
CEX(SUS)-2
V
CE
(sat)
V
BE
(sat)
I
CBO
I
CER
I
CEX
I
EBO
h
FE-1
h
FE-2
Collector-Emitter Sustaining Voltage IC= 3.0A ; IB= 0.3A, L=1mH 60 V
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
C
V
=5.0V, L=180μH,clamped
BE(OFF)
= 6.0A ; IB1= 0.6A; IB2= -0.3A,
I
C
= -5.0V, L= 180μH,clamped
V
BE(OFF)
80 V
60 V
= 3.0A ; IB1=-IB2= 0.3A,
I
Collector-Emitter Saturation Voltage IC= 3.0A; IB= 0.3A 0.6 V
Base-Emitter Saturation Voltage IC= 3.0A; IB= 0.3A 1.5 V
Collector Cutoff Current VCB= 60V; IE= 0 10
V
Collector Cutoff Current
Collector Cutoff Current
= 60V; RBE= 51Ω, Ta=125℃
CE
= 60V; V
V
CE
VCE= 60V; V
= -1.5V
BE(off)
= -1.5V, Ta=125℃
BE(off)
1.0 mA
10
1.0
Emitter Cutoff Current VEB= 5V; IC=0 10
μA
μA
mA
μA
DC Current Gain IC= 0.3A; VCE= 5V 40
DC Current Gain IC= 3.0A; VCE= 5V 40 200
Switching times
t
on
t
stg
t
f
Turn-on Time 0.5
Storage Time 3.0
Fall Time
h
Classifications
FE-2
M L K
40-80 60-120 100-200
= 3.0A ,RL= 17Ω,
I
C
IB1= -IB2= 0.3A,VCC≈ 50V
0.5
μs
μs
μs
isc Website：www.iscsemi.cn
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