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INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3565
DESCRIPTION
·High Collector-Emitter Breakdown Voltage : V
(BR)CEO
·Good Linearity of h
·Low Saturation Voltage
APPLICATIONS
·Designed for use in high frequency high voltage amplifier
and TV viedo output applications.
ABSOLUTE MAXIMUM RATINGS(T
= 300V(Min)
FE
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
P
T
CBO
CEO
EBO
I
C
C
T
J
stg
Collector-Base Voltage 300 V
Collector-Emitter Voltage 300 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 0.2 A
Collector Power Dissipation
@ TC=25℃
Junction Temperature 150
Storage Temperature Range -40~150
15 W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3565
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CE(
I
CEO
h
Collector-Base Breakdown Voltage IC= 10μA ; IE= 0 300 V
Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= ∞ 300 V
Emitter-Base Breakdown Vltage IE= 10μA ; IC= 0 7 V
Collector-Emitter Saturation Voltage IC= 20mA; IB= 2mA 1.5 V
)
sat
Collector Cutoff Current VCE= 250V; RBE= ∞ 1 μA
FE
f
T
DC Current Gain IC= 10mA; VCE= 10V 30 200
Current-Gain—Bandwidth Product IC= 10mA; VCE= 20V 80 MHz
isc Website：www.iscsemi.cn
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