Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3563
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V
(BR)CEO
·High Switching Speed
APPLICATIONS
·Switching regulator and high voltage switching applications.
·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(T
= 450V (Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
P
CBO
CEO
EBO
I
C
C
T
J
Collector-Base Voltage 600 V
Collector-Emitter Voltage 450 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 10 A
Collector Power Dissipation
@ TC=25℃
Collector Power Dissipation
@ T
=25℃
a
Junction Temperature 150
40
W
2
℃
T
stg
Storage Temperature Range -55~150
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3563
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
V
h
h
CE(
BE(
I
I
CBO
EBO
FE-1
FE-2
sat
sat
Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 450 V
Collector-Base Breakdown Voltage IC= 1mA; IE= 0 600 V
Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A B 1.0 V
)
Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A B 1.5 V
)
Collector Cutoff Current VCB= 500V; IE= 0 100 μA
Emitter Cutoff Current VEB= 7V; IC= 0 1 mA
DC Current Gain IC= 0.5A; VCE= 5V 20
DC Current Gain IC= 4A; VCE= 5V 8
isc Website：www.iscsemi.cn
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