Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3559
DESCRIPTION
·With TO-220Fa package
·High breakdown voltage
·High speed switching
APPLICATIONS
·Switching regulator and high voltage
switching applications
·High speed DC-DC converter applications
PINNING
PIN DESCRIPTION
·
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) 3 A
ICM Collector current-Peak 5 A
IB Base current 1 A
PC Collector power dissipation
Collector-base voltage Open emitter 900 V
Collector-emitter voltage Open base 800 V
Emitter-base voltage Open collector 7 V
℃)
TC=25℃
T
=25℃
a
30
W
2
Tj
T
stg
Junction temperature 150
Storage temperature -55~150
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3559
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
Collector-emitter breakdown voltage IC=10mA , IB=0 800 V
Collector-base breakdown voltage IC=1mA , IE=0 900 V
Collector-emitter saturation voltage IC=0.8A; IB=0.16A 0.6 V
Base-emitter saturation voltage IC=0.8A; IB=0.16A 1.2 V
Collector cut-off current VCB=800V; IE=0 0.1 mA
Emitter cut-off current VEB=7V; IC=0 1.0 mA
DC current gain IC=0.8A ; VCE=5V 10
Switching times
tr
ts
Rise time 1.0 μs
=0.08A; IB2=-0.2A
I
Storage time 4.0 μs
B1
VCC≈400V; RL=500Ω
tf
Fall time
1.0 μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3559
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
Page 4
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3559
4
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