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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3557
DESCRIPTION ·
·With TO-220C package
·Low collector saturation voltage
APPLICATIONS
·For medium power linear and
switching applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter 80 V
CBO
V
Collector-emitter voltage Open base 80 V
CEO
V
Emitter-base voltage Open collector 5 V
EBO
IC Collector current 4 A
PC Collector power dissipation TC=25℃ 40 W
℃)
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3557
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)EBO
V
CEsat
I
CEO
I
CBO
I
EBO
hFE DC current gai n IC=0.2A ; VCE=1V 150
Collector-emitter sustaining voltage IC=30mA; IB=0 80 V
Emitter-base breakdown voltage IE=1mA; IC=0 5 V
Collector-emitter saturation voltage IC=3A;IB=0.3 A 1.5 V
Collector cut-off current VCE=60V; IB=0 0.5 mA
Collector cut-off current VCB=80V; IE=0 0.1 mA
Emitter cut-off current VEB=5V; IC=0 0.1 mA
2
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3557
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
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