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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3551
DESCRIPTION
·With TO-3PN package
·High voltage ,high speed switching
·High reliability
APPLICATIONS
·Switching regulators
·Ultrasonic generators
·High frequency inverters
·General purpose power amplifiers
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 5 A
IB Base current 3 A
PC Collector power dissipation TC=25℃ 80 W
Tj Junction temperature 150 ℃
T
stg
Collector-base voltage Open emitter 900 V
Collector-emitter voltage Open base 800 V
Emitter-base voltage Open collector 10 V
Storage temperature -55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
Thermal resistance junction case 1.5 ℃/W
th j-C
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3551
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
Collector-emitter breakdown voltage IC=10mA ; IB=0 800 V
Collector-base breakdown voltage IC=1mA ; IE=0 900 V
Emitter-base breakdown voltage IE=1mA ; IC=0 10 V
Collector-emitt er saturation voltage IC=2A ;IB=0.4A 1.0 V
Base-emitter saturation voltage IC=2A ;IB=0.4A 1.5 V
Collector cut-off current VCB=900V IE=0 1.0 mA
Emitter cut-off current VEB=10V; IC=0 1.0 mA
hFE DC current gai n IC=2A ; VCE=5V 10
Switching times
ton Turn-on time 1.0
ts Storage time 4.0
IC=3A; RL=100Ω
=0.6A; IB2=-1.2A
I
B1
μs
μs
tf Fall time
0.8
μs
2
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3551
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
Page 4
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3551
4
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