Page 1
DATA SHEET
SILICON TRANSISTOR
2SC3545
UHF OSCILLATOR AND MIXER
NPN SILICON EPITAXIAL TRANSISTOR
MINI MOLD
DATA SHEET
Document No. P10358EJ2V1DS00 (2nd edition)
Date Published March 1997 N
Printed in Japan
1984©
DESCRIPTION
The 2SC3545 is an NPN silicon epitaxial transistor intended for use as
UHF oscillator and mixer in a tuner of a TV receiver.
The device features stable oscillation and small frequency drift against
any change of the supply voltage and the ambient temperature.
It is designed for use in small type equipments especially
recommended for Hybrid Integrated Circuit and other applications.
FEATURES
• High Gain Bandwidth Procuct; fT = 2 000 MHz TYP.
• Low Collector to Base Time Constant; CC
r
b’b
= 4 ps TYP.
• Low Feedback Capacitance; C
re
= 0.48 pF TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25
C)
Maximum Voltages and Current
Collector to Base Voltage V
CBO
30 V
Collector to Emitter Voltage V
CEO
15 V
Emitter to Base Voltage V
EBO
3.0 V
Collector Current I
C
50 mA
Maximum Power Dissipation
Total Power Dissipation P
T
150 mW
Maximum Temperature
Junction Temperature T
j
125
C
Storage Temperature T
stg
65 to +125C
ELECTRICAL CHARACTERISTICS (TA = 25
C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Cutoff Current I
CBO
0.1
AVCB = 12 V, IE = 0
DC Current Gain h
FE
50 100 250 VCE = 10 V, IC = 5.0 mA
Collector Saturation Voltage V
CE(sat)
0.5 V IC = 10 mA, IB = 1.0 mA
Gain Bandwidth Product f
T
1.3 2.0 MHz VCE = 10 V, IE = 5.0 mA
Output Capacitance C
ob
0.48 1.0 pF VCB = 10 V, IE = 0, f = 1.0 MHz
Collector to Base Time Constant CC
r
b’b
410psV
CE
= 10 V, IE = 5.0 mA, f = 31.9 MHz
hFE Classification
Class M/P * L/Q * K/R *
Marking T42 T43 T44
h
FE
50 to 100 70 to 140 120 to 250 * Old Specification / New Specification
PACKAGE DIMENSIONS
(Units: mm)
1.5
2
1
3
Marking
PIN CONNECTIONS
1.
2.
3.
Emitter
Base
Collector
2.8±0.2
2.9±0.21.1 to 1.4
0 to 0.1
0.950.3 0.95
0.4
+0.1
−0.05
0.4
+0.1
−0.05
0.16
+0.1
−0.06
0.65
+0.1
−0.15
Page 2
2
2SC3545
TYPICAL CHARACTERISTICS (TA = 25
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
300
100
50
150
200
250
0
10
20
50
100
200
5025
1 5 10 500.5
75 125100
T
A
-Ambient Temperature-°C
I
C
-Collector Current-mA
DC CURRENT GAIN vs.
COLLECTOR CURRENT
P
T
-Total Power Dissipation-Wh
FE
-DC Current Gain
VCE = 10 V
0
5
10
15
0.5 1 5 10 50 70
I
C
-Collector Current-mA
INSERTION GAIN, MAXIMUM AVAILABLE
GAIN vs. COLLECTOR CURRENT
G
max
-Maximum Available Gain-dB
|S
21e
|
2
-Insertion Gain-dB
VCE = 10 V
f = 1.0 GHz
0.1
0.5
0.3
0.2
0.7
1
3
2
123 75102030
V
CB
-Collector to Base Voltage-V
TYPICAL DEVICE CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
C
re
-Feed-back Capacitance-pF
f = 1.0 MHz
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
0.1 0.5 1.0 105.0 30
I
C
-Collector Current-mA
GAIN BANDWIDTH PROUDCT vs.
COLLECTOR CURRENT
f
T
-Gain Bandwidth Product-MHz
VCE = 10 V
0
5
10
15
0.5 1 5 10 50 70
I
C
-Collector Current-mA
COLLECTOR TO BASE TIME CONSTANT
vs. COLLECTOR CURRENT
C
C
.
r
b'b
-Collector to Base Time Constant-ps
VCE = 10 V
f = 31.9 MHz
Free air
MAG
|S
21e
|
2
Page 3
3
2SC3545
S-PARAMETER
VCE = 10 V, IC = 5 mA, ZO = 50
f (MHz)
S
11
S
11
S
21
S
21
S
12
S
12
S
22
S
22
200
400
600
800
1000
1200
1400
1600
0.472
0.310
0.261
0.262
0.270
0.288
0.323
0.356
80.6
117.3
139.9
160.4
176.6
172.3
162.4
151.0
7.581
4.029
2.926
2.118
1.860
1.504
1.413
1.201
114.1
92.9
81.7
70.2
62.8
54.4
47.9
40.9
0.037
0.055
0.077
0.098
0.108
0.125
0.148
0.160
60.2
55.5
60.2
62.8
64.6
65.7
66.4
68.0
0.780
0.723
0.721
0.698
0.691
0.688
0.664
0.658
8.2
15.1
18.8
22.6
25.1
30.7
35.1
39.3
VCE = 10 V, IC = 10 mA, ZO = 50
f (MHz)
S
11
S
11
S
21
S
21
S
12
S
12
S
22
S
22
200
400
600
800
1000
1200
1400
1600
0.323
0.246
0.247
0.273
0.299
0.314
0.353
0.380
101.4
136.2
158.8
173.7
172.6
162.7
154.5
144.7
8.735
4.383
3.120
2.259
1.968
1.589
1.483
1.257
104.9
87.4
78.0
67.2
60.1
52.5
46.3
39.5
0.037
0.052
0.074
0.086
0.102
0.126
0.146
0.166
49.5
65.2
67.3
68.2
69.4
70.1
70.4
70.3
0.711
0.693
0.696
0.679
0.671
0.663
0.648
0.648
8.5
13.8
16.8
20.0
23.8
26.6
33.7
38.5
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4
2SC3545
S-PARAMETER
A
N
G
L
E
O
F
R
E
F
L
E
C
T
I
O
N
C
O
E
F
F
C
I
E
N
T
I
N
D
E
G
R
E
E
S
20
30
40
50
0060
70
80
90
100
110
120
130
140
150
−
160
−
150
−
140
−
130
−
120
−
110
−
100
−
90
−
80
−
70
−
60
−50
−40
−30
−20
−10
0
10
0.28
0.22
0.30
0.20
0.32
0.18
0.34
0.16
0.36
0.14
0.38
0.12
0.40
0.10
0.42
0.08
0.44
0.06
0.46
0.04
0.21
0.19
0.17
0.15
0.13
0.11
0.09
0.07
0.05
0.03
0.29
0.31
0.33
0.35
0.37
0.39
0.41
0.43
0.45
0.47
0.02
0.48
0.01
0.49
0
0
0.49
0.01
0.48
0.02
0.47
0.03
0.46
0.04
0.45
0.05
0.44
0.06
0.43
0.07
0.42
0.08
0.41
0.09
0.40
0.10
0.39
0.11
0.38
0.12
0.37
0.13
0.36
0.14
0.35
0.15
0.34
0.16
0.33
0.17
0.32
0.18
0.31
0.19
0.30
0.20
0.29
0.21
0.28
0.22
0.27
0.23
0.26
0.24
0.25
0.25
0.24
0.26
0.23
0.27
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
L
O
A
D
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
G
E
N
E
R
A
T
O
R
2.0
50
10
6.0
4.0
3.0
1.8
1.6
1.4
1.2
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.0
(
+JX
––––
Z
O
)
0.2
0.4
0.6
0.8
1.0
0.8
0.7
0.6
0.3
0.2
0.1
0.2
1.0
0.8
0.6
0.4
0.2
1.0
0.8
0.6
0.4
0.4
0.5
5.0
10
50
3.0
4.0
1.8
2.0
1.2
1.0
0.9
1.4
1.6
REACTANCE COMPONENT
(
R
––––
Z
O
)
NE
G
A
T
IVE
R
E
A
C
T
A
N
C
E
C
OM
P
O
N
E
N
T
P
OS
I
T
I
V
E
R
E
A
C
T
A
N
C
E
CO
M
P
O
N
E
N
T
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
2.0
3.0
4.0
5.0
10
20
0
(
−JX
––––
Z
O
)
20
20
0.2
0.4
0.6
0.8
1.0
S11e, S22e-FREQUENCY
S
21e-FREQUENCY
90°
0°
30°
−30°
60°
−60°
180°
150°
−150°
120°
−120°
−90°
20 4 6 810
S21e
0.2 GHz
1.6 GHz
90°
30°
−30°
60°
−60°
180°
150°
−150°
120°
−120°
−90°
0.050 0.1 0.15 0.2 0.25
S12e
0.2 GHz
1.6 GHz
S12e-FREQUENCY
VCE = 10 V, 200 MHz StepCONDITION
V
CE = 10 V, 200 MHz StepCONDITION
V
CE = 10 V, 200 MHz StepCONDITION
0.2 GHz
0.2 GHz
1.6 GHz
1.6 GHz
IC = 5 mA
I
C = 10 mA
S11e
S22e
IC = 5 mA
I
C = 10 mA
IC = 5 mA
I
C = 10 mA
0°
Page 5
5
2SC3545
[MEMO]
Page 6
6
2SC3545
[MEMO]
Page 7
7
2SC3545
[MEMO]
Page 8
2SC3545
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5
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