Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3540
DESCRIPTION
·With TO-220Fa package
·Low collector saturation voltage
·High speed switching time
·Complement to type 2SA1388
APPLICATIONS
·High current switching applications
PINNING
PIN DESCRIPTION
·
1
2 Collector
3 Emitter
Base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) 5 A
ICM Collector current-peak 8 A
IB Base current (DC) 1 A
PC Collector power dissipation
Collector-base voltage Open emitter 100 V
Collector-emitter voltage Open base 80 V
Emitter-base voltage Open collector 7 V
℃)
Ta=25℃ 2
=25℃ 25
T
C
W
Tj
T
stg
Junction temperature 150 ℃
Storage temperature -55~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3540
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Collector-emitter breakdown voltage IC=10mA ;IB=0 80 V
(BR)CEO
V
Collector-emitter saturation voltage IC=3A ;IB=0.15A 0.2 0.4 V
CEsat
V
Base-emitter saturation voltage IC=3A ;IB=0.15A 0.9 1.2 V
BEsat
I
Collector cut-off current VCB=100V; IE=0 1
CBO
I
Emitter cut-off current VEB=7V; IC=0 1
EBO
h
DC current gain IC=1A ; VCE=1V 70 240
FE-1
h
DC current gain IC=3A ; VCE=1V 40
FE-2
μA
μA
fT Trainsition frequency IC=1A ; VCE=4V 120 MHz
Cob Collector output capacitance IE=0 ; VCE=10V;f=1MHz 80 pF
Switching times
ton
Turn-on time 0.2
μs
t
stg
tf
Storage time 1.0
Fall time
h
Classifications
FE-1
O Y
70-140 120-240
I
=-IB2=0.15A
B1
VCC≈30V;RL=10Ω
0.1
μs
μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3540
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
Page 4
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3540
4
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