Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3528
DESCRIPTION
·Low Collector Saturation Voltage
·High Collector Current
·Good Linearity of h
APPLICATIONS
·Designed for switching regulator and high voltage
switching applications.
ABSOLUTE MAXIMUM RATINGS(T
FE
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
P
CBO
CEO
EBO
I
C
I
B
C
T
J
Collector-Base Voltage 500 V
Collector-Emitter Voltage 400 V
Emitter-Base voltage 7 V
Collector Current-Continuous 20 A
B Base Current-Continuous 6 A
Collector Power Dissipation
=25℃
@ T
C
Collector Power Dissipation
=25℃
@ T
a
Junction Temperature 150
125
W
3
℃
T
stg
Storage Temperature Range -55~150
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3528
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
Switching times
t
on
Collector-Emitter Sustaining Voltage IC= 0.5A ; L= 25mH 400 V
Collector-Emitter Saturation Voltage IC= 10A; IB= 2A 1.0 V
Base-Emitter Saturation Voltage IC= 10A; IB= 2A 1.5 V
Collector Cutoff Current VCB= 500V ; IE= 0 100
Emitter Cutoff Current VEB= 7V; IC= 0 100
DC Current Gain IC= 2A ; VCE= 5V 15
DC Current Gain IC= 10A ; VCE= 5V 10
Current-Gain—Bandwidth Product IC= 1A ; VCE= 10V; f= 1MHz 15 MHz
Turn-On Time 1.0
μA
μA
μs
I
= 10A; IB1= 2.0A, IB2= -2.0A;
t
stg
t
f
Storage Time 2.5
Fall Time
C
V
CC
= 125V
1.0
μs
μs
isc Website：www.iscsemi.cn
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