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INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3514
DESCRIPTION
·High Collector-Emitter Breakdown Voltage : V
(BR)CEO
·Good Linearity of h
·Complement to Type 2SA1383
APPLICATIONS
·Adudio frequency power amplifier
ABSOLUTE MAXIMUM RATINGS(T
= 180V(Min)
FE
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
P
T
CBO
CEO
EBO
I
C
T
stg
Collector-Base Voltage 180 V
Collector-Emitter Voltage 180 V
Emitter-Base Voltage 5.0 V
Collector Current-Continuous 0.1 A
Collector Power Dissipation@ Ta=25℃
C
Collector Power Dissipation@TC=25℃
Junction Temperature 150
J
Storage Temperature Range -55~150
1.5
W
10
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3514
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CE(
V
BE(
I
I
h
h
C
h
Collector-Emitter Saturation Voltage IC= 50mA; IB= 5mA 0.5 V
)
sat
Base-Emitter Saturation Voltage IC= 50mA; IB= 5mA 1.5 V
)
sat
CBO
EBO
FE-1
FE-2
f
T
OB
FE-2
Collector Cutoff Current VCB= 180V; IE= 0 1.0
Emitter Cutoff Current VEB= 3.0V; IC=0 1.0
DC Current Cain IC= 1mA; VCE= 5V 90
DC Current Cain IC= 10mA; VCE= 5V 100 320
Current-Gain—Bandwidth Product IC= 20mA; VCE= 10V 200 MHz
Output Capacitance
Classifications
= 0; VCB= 10V; f
I
E
= 1.0MHz
test
μA
μA
3.2 pF
Q P
100-200 160-320
isc Website：www.iscsemi.cn
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