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Application
UHF / VHF wide band amplifier
Outline
2SC3512
Silicon NPN Epitaxial
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2SC3512
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
CBO
15 V
Collector to emitter voltage V
CEO
11 V
Emitter to base voltage V
EBO
2 V
Collector current I
C
50 mA
Collector power dissipation P
C
600 mW
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage
Collector to cutoff current I
Emitter cutoff current I
Collector cutoff current I
DC current transfer ratio h
Collector output capacitance Cob — 1.2 1.6 pF VCB = 5 V, IE = 0, f = 1 MHz
Gain bandwidth product f
Power gain PG — 10.5 — dB VCE = 5 V, IC = 20 mA,
Noise figure NF — 1.6 — dB VCE = 5 V, IC = 5 mA,
V
(BR)CBO
CEO
EBO
CBO
FE
T
15 — — V IC = 10 µA, IE = 0
— — 1 µA VCE = 10 V, RBE = ∞
— — 1 µA VEB = 1 V, IC = 0
— — 1 µA VCB = 12 V, IE = 0
50 120 250 VCE = 5 V, IC = 20 mA
— 6.0 — GHz VCE = 5 V, IC = 20 mA
f = 900 MHz
f = 900 MHz
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2SC3512
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2SC3512
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2SC3512
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examples described herein.
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or Hitachi, Ltd.
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