Datasheet 2SC3510, 2SC3128, 2SC3127 Datasheet (HIT)

2SC3127, 2SC3128, 2SC3510

Application

UHF/VHF wide band amplifier

Outline

MPAK 2SC3127

Silicon NPN Epitaxial

ADE-208-1080A (Z)

2nd. Edition

Mar. 2001

3

Note: Marking for 2SC3127 is “ID–”.

1

2

1. Emitter

2. Base

3. Collector

2SC3127, 2SC3128, 2SC3510

TO-92 (2) 2SC3128, 2SC3510

3

2

1

Absolute Maximum Ratings (Ta = 25°C)

1. Base

2. Emitter

3. Collector

Item Symbol 2SC3127*
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P

CBO

CEO

EBO

C

C

20 20 20 V
12 12 12 V
333V
50 50 50 mA
150 350 600 mW

1

2SC3128 2SC3510 Unit

Junction temperature Tj 150 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 –55 to +150 °C

2

2SC3127, 2SC3128, 2SC3510

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Collector to base breakdown

V

(BR)CBO

20——V I

voltage
Collector to emitter breakdown

V

(BR)CEO

12——V I

voltage
Emitter cutoff current I
Collector cutoff current I
DC current transfer ratio h

EBO

CBO

FE

——10µAVEB = 3 V, IC = 0
— — 0.5 µAVCB = 12 V, IE = 0

30 90 200 VCE = 5 V, IC = 20 mA
Collector output capacitance Cob — 0.9 1.5 pF VCB = 5 V, IE = 0, f = 1 MHz
Gain bandwidth product f

T

3.5 4.5 — GHz VCE = 5 V, IC = 20 mA

Power gain PG — 10.5 — dB VCE = 5 V, IC = 20 mA,

Noise figure NF — 2.2 — dB VCE = 5 V, IC = 5 mA,

DC Current Transfer Ratio vs.

Maximum Collector Dissipation Curve

600

2SC3510

FE

200

160

VCE = 5 V

= 10 µA, IE = 0

C

= 1 mA, RBE = ∞

C

f = 900 MHz

f = 900 MHz

Collector Current

400

2SC3128

200

2SC3127

Collector Power Dissipation Pc (mW)

0 50 100 150 200

Ambient Temperature Ta (°C)

120

80

40

DC Current Transfer Ratio h

0

1 2 5 10 20 50 100

Collector Current I

(mA)

C

3

2SC3127, 2SC3128, 2SC3510

Gain Bandwidth Product vs.

Collector Current

5.0

4.0

(GHz)

T

3.0

2.0

1.0

VCE = 5 V
f = 500 MHz

Gain Bandwidth Product f

0

12 51020 50

Collector Current I

(mA)

C

Reverse Transfer Capacitance vs.

Collector to Base Voltage

2.0

(pF)

re

f = 1 MHz
Emitter Common

1.6

1.2

0.8

Collector Output Capacitance vs.

Collector to Base Voltage

2.0

(pF)

ob

1.6
f = 1 MHz

= 0

I

E

1.2

0.8

0.4

Collector Output Capacitance C

0

12 51020 50

Collector to Base Voltage VCB (V)

Power Gain and Noise Figure vs.

Collector Current

20

16

PG

12

VCE = 5 V
f = 500 MHz

8

0.4

Reverse Transfer Capacitance C

0

12 51020 50

Collector to Base Voltage VCB (V)

Power Gain PG (dB)

Noise Figure NF (dB)

4

NF

0

0 1020304050

Collector Current IC (mA)

4

Power Gain and Noise Figure vs.

Collector Current

12

2SC3127, 2SC3128, 2SC3510

2nd I.M. Distortion vs. Collector Current

70

10

8

PG

VCE = 5 V
f = 900 MHz

6

Power Gain PG (dB)

Noise Figure NF (dB)

4

NF

2

0 1020304050

Collector Current IC (mA)

2nd I.M. Distortion vs. Collector Current

70

60

50

40

30

2nd I.M. Distortion 2nd I.M.D. (dB)

VCC = 12 V
f

= 600 MHz, f2 = 650 MHz

1

= 100 dBµ

V

out

f

= 1,250 MHz

2nd

20

0 1020304050

Collector Current IC (mA)

60

50

40

30

2nd I.M. Distortion 2nd I.M.D. (dB)

VCC = 12 V

= 210 MHz, f2 = 200 MHz

f

1

V

= 100 dBµ

out

f

= 410 MHz

2nd

20

0 1020304050

Collector Current IC (mA)

3rd I.M. Distortion vs. Collector Current

80

f = 190 MHz

70

f = 220 MHz

60

50

40

3rd I.M. Distortion 3rd I.M.D. (dB)

VCC = 12 V
f

= 210 MHz, f2 = 200 MHz

1

V

= 100 dBµ

out

f

= 190 MHz, 220 MHz

3rd

30

0 1020304050

Collector Current IC (mA)

5

2SC3127, 2SC3128, 2SC3510

3rd I.M. Distortion vs. Collector Current

70

60

f = 550 MHz

3rd I.M. Distortion 3rd I.M.D. (dB)

10

8

6

4

Noise Figure NF (dB)

2

50

f = 700 MHz

40

30

VCC = 12 V

= 600 MHz, f2 = 650 MHz

f

1

V

= 100 dBµ

out

f

= 550 MHz, 700 MHz

3rd

20

0 1020304050

Collector Current IC (mA)

Noise Figure vs. Frequency

Post AMP. NF

NF

VCC = 12 V

= 20 mA

I

C

0

400 500 600 700 800 900

Frequency f (MHz)

6

10

8

6

4

Power Gain PG (dB)

2

2SC3127, 2SC3128, 2SC3510

Power Gain vs. Frequency

VCC = 12 V, IC = 20 mA
Input Power Level
–50 dBm

0

10

8

6

4

Power Gain PG (dB)

2

0

Frequency f (MHz)

Power Gain vs. Frequency

= 30 mA

I

C

VCC = 12 V
Input Power Level
–50 dBm

Frequency f (MHz)

1,000750500250

IC = 20 mA

IC = 10 mA

IC = 5 mA

1,000750500250

7

2SC3127, 2SC3128, 2SC3510

0

Input and Output Reflection Coefficient vs. Frequency

–5

–10

11&S22 (dB)

S

–15

Input and Output Reflection Coefficient

–20

Input

50 p

50 p

Rg = 50 Ω

L

L

1

2

2.4 k

2,200 p

S

22

S11

VCC = 12 V, IC = 20 mA
Input Power Level
–50 dBm

Frequency f (MHz)

Vhf to Uhf Wide Band Amp. Circuit

47050 p

5 p

110

1.2 p

4,400 p

T

1

4,400 p

1,200 p

2.5 p

1,0007505002500

Output

RL = 50 Ω

V

BB

Parts Spcecification
L

: Inside dia φ3.0 mm, φ0.4 mm Polyurethane Coated Copper wire 12 Turns.

1

: Inside dia φ3.5 mm, φ0.5 mm Polyurethane Coated Copper wire 9 Turns.

L

2

T

: Balance wind used Ferrite Core

1

Outside dia φ4.0 mm, Inside dia φ2.0 mm
φ0.1 mm Polyurethane Coated Copper wire 3 Turns.
Ratio Input to Output is 2 : 1

8

V

CC

Unit R : Ω
C : F

Package Dimensions

2SC3127, 2SC3128, 2SC3510

As of January, 2001

Unit: mm

0.4

+ 0.10
– 0.05

0.95

0.95

1.9 ± 0.2

2.95 ± 0.2

0.65

+ 0.2

1.5 ± 0.15

0.65

0.3

+ 0.2

– 0.6

2.8

– 0.1

1.1

+ 0.10

0.16

– 0.06

0 – 0.1

Hitachi Code
JEDEC
EIAJ
Mass

(reference value)

MPAK
—
Conforms

0.011 g

9

2SC3127, 2SC3128, 2SC3510

Cautions

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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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5. This product is not designed to be radiation resistant.

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Copyright  Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.

10

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