Page 1
Po wer Transistors
2SC3506
Silicon NPN triple diffusion planar type
For high-speed switching
Features
■
●
High-speed switching
●
High collector to base voltage V
●
Satisfactory linearity of foward current transfer ratio h
●
Full-pack package which can be installed to the heat sink with
one screw
Absolute Maximum Ratings (T
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
TC=25°C
Ta=25°C
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
CBO
=25˚C)
C
Ratings
1000
1000
800
7
6
3
2
70
3
150
–55 to +150
FE
Unit
W
˚C
˚C
Unit: mm
15.0±0.3
11.0±0.2
φ3.2±0.1
21.0±0.516.2±0.5
3.5 0.715.0±0.2
12.5
V
V
Solder Dip
10.9±0.5
V
2.0±0.2
1.1±0.1
5.45±0.3
321
5.0±0.2
3.2
2.0±0.1
0.6±0.2
V
A
A
A
TOP–3 Full Pack Package(a)
1:Base
2:Collector
3:Emitter
Electrical Characteristics (T
■
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
V
CEO(sus)
T est circuit
50/60Hz
mercury relay
120Ω
6V
Symbol
I
CBO
I
EBO
V
CEO(sus)
h
FE
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
=25˚C)
C
Conditions
VCB = 1000V, IE = 0
VEB = 7V, IC = 0
*
IC = 0.5A, L = 50mH
VCE = 5V, IC = 2A
IC = 2A, IB = 0.4A
IC = 2A, IB = 0.4A
VCE = 5V, IC = 0.2A, f = 1MHz
IC = 2A, IB1 = 0.4A, IB2 = – 0.8A,
VCC = 250V
X
L 50mH
Y
1Ω
15V
G
min
800
6
typ4max
50
50
1.5
1.5
1
2.5
0.5
Unit
µA
µA
V
V
V
MHz
µs
µs
µs
1
Page 2
Po wer Transistors 2SC3506
PC—Ta IC—V
160
)
140
W
(
C
120
100
80
(1)
60
40
20
(2)
Collector power dissipation P
(3)
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
)
V
(
10
BE(sat)
3
1
25˚C
0.3
0.1
0.03
Base to emitter saturation voltage V
0.01
0.1 301010.3 3
Collector current IC (A
=Ta
(1) T
C
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
=3.0W)
(P
C
V
BE(sat)—IC
IC/IB=5
TC=–25˚C
100˚C
)
CE
5
4
)
A
(
C
3
2
Collector current I
1
0
012108264
)
Collector to emitter voltage VCE (V
IB=800mA
hFE—I
1000
300
FE
100
30
10
Forward current transfer ratio h
0.3
0.1
TC=100˚C
–25˚C
3
1
0.01 0.1 1 100.03 0.3 3
Collector current IC (A
C
25˚C
400mA
TC=25˚C
200mA
150mA
100mA
50mA
20mA
=5V
V
CE
)
)
V
(
10
CE(sat)
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
)
1000
300
)
MHz
100
(
T
30
10
Transition frequency f
0.3
0.1
V
CE(sat)—IC
TC=100˚C
3
1
0.1 301010.3 3
25˚C
–25˚C
Collector current IC (A
fT—I
C
VCE=5V
f=1MHz
T
C
3
1
0.01 0.1 1 100.03 0.3 3
Collector current IC (A
IC/IB=5
)
=25˚C
)
100
30
)
µs
(
10
f
,t
stg
3
,t
on
1
0.3
0.1
Switching time t
0.03
0.01
082647153
Collector current IC (A
2
ton, t
, tf — I
stg
C
Pulsed tw=1ms
Duty cycle=1%
=5
I
C/IB
=–IB2)
(2I
B1
V
=250V
CC
=25˚C
T
C
t
stg
t
on
t
f
Area of safe operation (ASO)
10
I
CP
I
C
3
)
A
(
1
C
0.3
0.1
0.03
Collector current I
0.01
0.003
1 10 100 10003 30 300
)
Collector to emitter voltage VCE (V
Non repetitive pulse
T
=25˚C
C
t=10ms
1s
)
Page 3
Po wer Transistors 2SC3506
Area of safe operation, reverse bias ASO
8
7
)
A
(
C
Collector current I
I
CP
6
5
4
I
C
3
2
1
0
0
400
200
600
Collector to emitter voltage VCE (V
3
10
)
˚C/W
2
(
10
(t)
th
10
L
=100µH
coil
I
C/IB
(2I
B1
=125˚C
T
C
1200
800
1000
(1) PT=10V × 0.3A (3W) and without heat sink
=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
(2) P
T
=5
=–IB2)
1400
1600
R
Reverse bias ASO measuring circuit
V
in
t
W
)
—t
th(t)
L coil
T.U.T
I
I
B1
–I
B2
(1)
(2)
C
V
CC
V
clamp
1
Thermal resistance R
–1
10
–3
10
–2
10
–1
110
Time t (s
10 10
)
2
10
3
4
10
3
Loading...