Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3486
DESCRIPTION
·With TO-3PN package
·High voltage ,high speed
·Wide area of safe operation
APPLICATIONS
·For color TV display horizontal
output applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 6 A
ICM Collector current-peak 16 A
PC Collector power dissipation
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 800 V
Emitter-base voltage Open collector 7 V
T
=25℃
C
120 W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3486
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
hFE DC current gai n IC=1A ; VCE=5V 8
fT Transition frequency IC=1A ; VCE=10V 3 MHz
Switching times
t
stg
tf Fall time
Collector-emitter breakdown voltage IC=5mA ;RBE=∞ 800 V
Collector-base breakdown voltage IC=5mA ;IE=0 1500 V
Emitter-base breakdown voltage IE=5mA ;IC=0 7 V
Collector-emitter saturation voltage IC=5A; IB=1.2A 5.0 V
Base-emitter saturation voltage IC=5A; IB=1.2A 1.5 V
Collector cut-off current VCB=800V; IE=0 10 μA
Emitter cut-off current VEB=5V; IC=0 1 mA
Storage time 3.0 μs
=5A;RL=40Ω
I
C
=1A; IB2=-2A
I
B1
0.3 μs
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3486
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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