Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3479
DESCRIPTION
·High Breakdown Voltage : V
= 1500V (Min)
CBO
·High Switching Speed
·High Reliability
·Built-in Damper Diode
APPLICATIONS
·Designed for high definition CRT display horizontal
deflection output applications.
ABSOLUTE MAXIMUM RATINGS(T
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CP
C
T
J
Collector-Base Voltage 1500 V
Collector-Emitter Voltage 800 V
Emitter-Base Voltage 7 V
Collector Current- Continuous 2.5 A
Collector Current-Pulse 8 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150 ℃
80 W
T
stg
Storage Temperature Range -55~150 ℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3479
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
V
(BR)CEO
Collector-Emitter Breakdown Voltage
= 5mA; RBE= ∞
C
800 V
V
(BR)CBO
V
(BR)EBO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE
V
ECF
f
T
Collector-Base Breakdown Voltage IC= 5mA; IE= 0 1500 V
Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 7 V
Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 8.0 V
Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 1.5 V
Collector Cutoff Current VCB= 800V; IE= 0 10
Emitter Cutoff Current VEB= 4V; IC= 0 40 130 mA
DC Current Gain IC= 0.5A; VCE= 5V 8
C-E Diode Forward Voltage IF= 2.5A 2.0 V
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V 3 MHz
μA
t
f
Fall Time IC= 2A, IB1= 0.4A; IB2= -0.8A 0.3
isc Website：www.iscsemi.cn
2
μs
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