Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3475
DESCRIPTION
·Low Collector Saturation Voltage
: V
·High Switching Speed
APPLICATIONS
·High speed switching applications.
·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(T
= 0.6V(Max)@ IC= 2A
CE(sat)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
I
B
C
Collector-Base Voltage 100 V
Collector-Emitter Voltage 60 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 4 A
Collector Current-Peak 8 A
B Base Current-Continuous 1 A
Collector Power Dissipation
=25℃
@ T
C
Collector Power Dissipation
=25℃
@ T
a
20
W
2
T
J
T
stg
Junction Temperature 150
Storage Temperature Range -55~150
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3475
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE(
sat
V
BE(
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
Switching times
t
on
Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 60 V
Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A B 0.6 V
)
Base-Emitter Saturation Voltage IC= 2A; IB= 0.2A B 1.5 V
)
sat
Collector Cutoff Current VCB= 100V; IE= 0 100 μA
Emitter Cutoff Current VEB= 7V; IC= 0 100 μA
DC Current Gain IC= 1A; VCE= 4V 60 200
DC Current Gain IC= 4A; VCE= 4V 20
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 4V 20 MHz
Output Capacitance
Turn-on Time 0.5 μs
I
= 0; VCB= 10V; f
E
= 1.0MHz
test
70 pF
= -IB2= 0.2A; RL= 15Ω;
I
t
stg
t
f
Storage Time 2.5 μs
Fall Time
B1
V
= 30V
CC
0.5 μs
h
classifications
FE-1
O Y
60-120 100-200
isc Website：www.iscsemi.cn
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