Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3465
DESCRIPTION
·With TO-3 package
·High voltage
·Fast switching speed
APPLICATIONS
·For switching regulator applications
PINNING(see fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 12 A
PT Total power dissipation
Tj Junction temperature 200
Collector-base voltage Open emitter 1100 V
Collector-emitter voltage Open base 800 V
Emitter-base voltage Open collector 7 V
T
=25℃
C
160 W
℃
T
Storage temperature -65~200
stg
℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3465
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
V
(BR)CEO
Collector-emitter breakdown voltage
=5mA; RBE=∞
C
800 V
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
fT Transition freuquency IC=0.8A ;VCE=10V 15 MHz
COB Collector output capacitance IE=0 ;VCB=10V,f=1MHz 240 pF
Collector-base breakdown voltage IC=1mA; IE=0; 1100 V
Emitter-base breakdown voltage IE=1mA; IC=0; 7 V
Collector-emitter saturation voltage IC=6A;IB=1.2A 2.0 V
Base-emitter saturation voltage IC=6A;IB=1.2A 1.5 V
Collector cut-off current VCB=800V;IE=0 10
Emitter cut-off current VEB=7V;IC=0 10
DC current gain IC=0.8A ;VCE=5V 10 40
DC current gain IC=4A ;VCE=5V 10
μA
μA
h
classifications
FE-1
K L M
10-20 15-30 20-40
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3465
PACKAGE OUTLINE
3
Fig.2 Outline dimensions
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