Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3462
DESCRIPTION
·High Breakdown Voltage : V
·Fast Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for switching regulator Applications
ABSOLUTE MAXIMUM RATINGS(T
(BR)CBO
= 1100V(Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
I
B
C
T
J
Collector-Base Voltage 1100 V
Collector-Emitter Voltage 800 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 4.5 A
Collector Current-Peak 15 A
B Base Current-Continuous 2 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150 ℃
100 W
T
stg
Storage Temperature Range -55~150 ℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3462
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEO(SUS)
V
(BR)CBO
V
(BR)EBO
V
CE(
V
BE(
I
CBO
I
EBO
h
FE-1
h
FE-2
C
OB
Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞ 800 V
= 2A; IB1= -IB2= 0.4A;
I
Collector-Emitter Sustaining Voltage
Collector-Base Breakdown Voltage IC= 1mA; IE= 0 1100 V
Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7 V
Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A B 2.0 V
)
sat
Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A B 1.5 V
)
sat
Collector Cutoff Current VCB= 800V; IE=0 10 μA
Emitter Cutoff Current VEB= 5V; IC=0 10 μA
DC Current Gain IC= 0.3A; VCE= 5V 10 40
DC Current Gain IC= 1.5A; VCE= 5V 8
Output Capacitance
C
L= 2mH; clamped
I
= 0; VCB= 10V; f
E
=1.0MHz
test
800 V
90 pF
f
T
Switching times
t
on
t
stg
t
f
Current-Gain—Bandwidth Product IC= 0.3A; VCE= 10V 15 MHz
Turn-on Time 0.5 μs
Storage Time 3.0 μs
Fall Time
IC= 3A , IB1= 0.6A; IB2= -1.2A
RL= 133Ω; VCC=400V
0.3 μs
h
Classifications
FE-1
K L M
10-20 15-30 20-40
isc Website：www.iscsemi.cn
2
Loading...