Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3420
DESCRIPTION ·
·With TO-126 package
·High DC current gain
·Low saturation voltage
·High collector power dissipation
APPLICATIONS
·Storobo flash applications
·Medium power amplifier applications
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter 50 V
CBO
V
Collector- emitter voltage Open base 20 V
CEO
V
Emitter-base voltage Open collector 8 V
EBO
IC Collector current 5 A
ICM Collector current-peak 8 A
IB Base current 1 A
PC Collector power dissipation
℃)
Ta=25℃ 1.5
W
TC=25℃ 10
Tj Junction temperature 150 ℃
T
Storage temperature -55～+150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3420
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
Collector cutoff current VCB=40V;IE=0 100 nA
CBO
I
Emitter cutoff current VEB=8V;IC=0 100 nA
EBO
V
h
Collector-emitter breakdown voltage IC=10mA ;IB=0 20 V
(BR)CEO
V
Collector-emitter saturation voltage IC=4A ;IB=0.1A 1 V
CEsat
V
Base-emitter voltage IC=4A ; VCE=2V 1.5 V
BE
h
DC current gain IC=0.5A ; VCE=2V 140 600
FE-1
h
DC current gain IC=4A ; VCE=2V 70
FE-2
C
Ob
fT Transition frequency IC=0.5A ; VCE=2V, 100 MHz
FE-1
Output capacitance IE=0; VCB=10V;f=1MHz 40 pF
Classifications
Y GR BL
140-240 200-400 300-600
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3420
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Page 4
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3420
4
Loading...