Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3412
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
(BR)CEO
= 500V (Min)
=25℃)
a
: V
·High Power Dissipation
APPLICATIONS
·Designed for TV horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER MAX UNIT
V
V
V
I
T
CBO
CEO
EBO
I
C
CM
P
C
T
stg
Collector-Base Voltage 1300 V
Collector-Emitter Voltage 500 V
Emitter-Base Voltage 6 V
Collector Current-Continuous 8 A
Collector Current-Peak 10 A
Collector Power Dissipation
=25℃
@T
C
Junction Temperature 150 ℃
j
Storage Temperature Range -45~150 ℃
50 W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3412
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
V
(BR)CEO
Collector-Emitter Breakdown Voltage
= 10mA; RBE= ∞
C
500 V
V
(BR)EBO
V
CE
(sat)
V
BE
(sat)
I
CES
Switching Times
t
stg
t
f
Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 6 V
Collector-Emitter Saturation Voltage IC= 5A; IB= 1A B 5.0 V
Base-Emitter Saturation Voltage IC= 5A; IB= 1A B 1.5 V
Collector Cutoff Current VCE= 1300V; RBE= 0 0.5 mA
Storage Time 3
Fall Time
I
= 5A; IB1 = 1A
C
0.2
μs
μs
isc Website：www.iscsemi.cn
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