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Silicon NPN Epitaxial
Application
• Low frequency low noise amplifier
• HF amplifier
Outline
2SC3390
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
CBO
CEO
EBO
C
C
55 V
50 V
5 V
100 mA
300 mW
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2SC3390
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Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio hFE*
Base to emitter voltage V
Collector to emitter saturation
voltage
Gain bandwidth product f
Collector output capacitance Cob — — 3.5 pF VCB = 10 V, IE = 0, f = 1 MHz
Noise figure NF — 1.0 5.0 dB VCE = 6 V, IC = 0.1 mA,
Note: 1. The 2SC3390 is grouped by hFE as follows.
B C
100 to 200 160 to 320
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
EBO
BE
V
CE(sat)
T
55 — — V IC = 10 µA, IE = 0
50 — — V IC = 1 mA, RBE = ∞
5 — — V IE = 10 µA, IC = 0
— — 0.5 µA VCB = 18 V, IE = 0
— — 0.5 µA VEB = 2 V, IC = 0
1
100 — 320 VCE = 12 V, IC = 2 mA
— — 0.75 V VCE = 12 V, IC = 2 mA
— — 0.2 V IC = 10 mA, IB = 1 mA
— 200 — MHz VCE = 12 V, IC = 2 mA
Rg = 1 kΩ, f = 1 kHz
See characteristic curves of 2SC458(LG).
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2SC3390
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examples described herein.
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