Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3388
DESCRIPTION
·High Collector-Emitter Sustaining Voltage : V
CEO(SUS)
·High Switching Speed
APPLICATIONS
·Designed for switching regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(T
= 500V(Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
T
CBO
CEO
EBO
I
C
CM
C
T
J
stg
Collector-Base Voltage 1200 V
Collector-Emitter Voltage 500 V
Emitter-Base voltage 6 V
Collector Current-Continuous 5 A
Collector Current-Peak 10 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150
Storage Temperature Range -55~150
50 W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3388
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)EBO
V
CE
V
BE
I
I
h
h
CBO
EBO
FE-1
FE-2
(sat)
(sat)
Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 500 V
Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 6 v
Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A B 1.0 V
Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A B 1.5 V
Collector Cutoff Current VCB= 800V; IE= 0 0.1 mA
Emitter Cutoff Current VEB= 5V; IC= 0 0.1 mA
DC Current Gain IC= 0.1A; VCE= 5V 15
DC Current Gain IC= 3A; VCE= 5V 8
isc Website：www.iscsemi.cn
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