Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3387
DESCRIPTION
·With TO-3PN package
·High breakdown voltage
·Fast switching speed
APPLICATIONS
·For horizontal deflection output
applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 5 A
ICM Collector current-peak 10 A
PC Collector power dissipation TC=25℃ 50 W
Collector-base voltage Open emitter 1200 V
Collector-emitter voltage Open base 500 V
Emitter-base voltage Open collector 6 V
℃)
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3387
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
hFE DC current gai n IC=0.3A ; VCE=5V 15
Collector-emitter sustaining voltage IC=100mA ;IB=0 500 V
Emitter-base breakdown voltage IE=1mA ;IC=0 6 V
Collector-emitter saturation voltage IC=4A ;IB=0.8A 5.0 V
Base-emitter saturation voltage IC=4A ;IB=0.8A 1.5 V
Collector cut-off current VCB=800V; IE=0 10 μA
Emitter cut-off current VEB=4V; IC=0 10 μA
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3387
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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