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Silicon NPN Triple Diffused
Application
• High frequency high voltage amplifier
• High voltage switch
Outline
2SC3380
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation PC*
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm)
CBO
CEO
EBO
C
1
300 V
300 V
5 V
100 mA
1 W
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2SC3380
2
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current I
Collector to emitter saturation
voltage
DC current transfer ratio h
Gain bandwidth product f
Collector output capacitance Cob — — 4 pF VCB = 20 V, IE = 0, f = 1 MHz
Note: Marking is “AS”.
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CEO
V
CE(sat)
FE
T
300 — — V IC = 10 µA, IE = 0
300 — — V IC = 1 mA, RBE = ∞
5 — — V IE = 10 µA, IC = 0
— — 1 µA VCE = 250 V, RBE = ∞
— — 1.5 V IC = 20 mA, IB = 2 mA
30 — 200 VCE = 20 V, IC = 20 mA
— 80 — MHz VCE = 20 V, IC = 20 mA
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2SC3380
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2SC3380
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2SC3380
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