Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3376
DESCRIPTION
·Collector-Emiiter Breakdown Voltage : V
(BR)CEO
·High Speed Switching
APPLICATIONS
·Switching regulator and high voltage switching applications.
·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS (T
·
= 800V(Min.)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
CBO
CEO
EBO
I
C
CM
I
B
P
C
T
Collector-Base Voltage 900 V
Collector-Emitter Voltage 800 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 3 A
Collector Current-Peak 5 A
B Base Current-Continuous 1 A
Collector Power Dissipation
=25℃
@T
C
Junction Temperature 150 ℃
j
60 W
T
stg
Storage Temperature Range -55~150 ℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3376
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
CE(
V
BE(
I
CBO
I
EBO
h
FE
Switching Times; Resistive Load
t
r
t
s
Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 800 V
Collector-Base Breakdown Voltage IC= 1mA; IE= 0 900 V
Collector-Emitter Saturation Voltage IC= 0.8A; IB= 0.16A 0.6 V
)
sat
Base-Emitter Saturation Voltage IC= 0.8A; IB= 0.16A 1.2 V
)
sat
Collector Cutoff Current VCB= 800V; IE= 0 0.1 mA
Emitter Cutoff Current VEB= 7V; IC= 0 1.0 mA
DC Current Gain IC= 0.8A; VCE= 5V 10
Rise Time 1.0 μs
Storage Time 4.0 μs
I
= 0.08A; IB2= -0.2A;
B1
VCC≈ 400V; RL= 500Ω
t
f
Fall Time
isc Website：www.iscsemi.cn
1.0 μs
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