Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3371
DESCRIPTION
·Collector-Emiiter Sustaining Voltage : V
CEO(SUS)
·Low Collector Saturation Voltage
: V
CE(sat)
·High Speed Switching
APPLICATIONS
·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS (T
·
= 500V(Min.)
= 1.0V(Max.)@ IC= 8A
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
CBO
CEO
EBO
I
C
CM
I
B
P
C
T
Collector-Base Voltage 800 V
Collector-Emitter Voltage 500 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 15 A
Collector Current-Peak 30 A
B Base Current-Continuous 5 A
Collector Power Dissipation
=25℃
@T
C
Junction Temperature 150 ℃
j
200 W
T
stg
Storage Temperature Range -55~150 ℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3371
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CE(
V
BE(
I
CBO
I
EBO
h
FE-1
h
FE-2
Switching Times; Resistive Load
t
on
t
s
Collector-Emitter Sustaining Voltage IC= 0.5A; L= 25mH 500 V
Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A B 1.0 V
)
sat
Base-Emitter Saturation Voltage IC= 8A; IB= 1.6A B 1.5 V
)
sat
Collector Cutoff Current VCB= 800V; IE= 0 0.1 mA
Emitter Cutoff Current VEB= 5V; IC= 0 0.1 mA
DC Current Gain IC= 0.1A; VCE= 5V 15
DC Current Gain IC= 8A; VCE= 5V 10
Turn-on Time 1.0 μs
Storage Time 3.0 μs
= 8A; IB1= -IB2= 1.6A;
I
C
= 200V
V
CC
t
f
Fall Time
isc Website：www.iscsemi.cn
1.0 μs
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