Page 1
2SC3365
Silicon NPN Triple Diffused
Application
High voltage, high speed and high power switching
Outline
TO-3P
1. Base
2. Collector
(Flange)
3. Emitter
1
2
3
Page 2
2SC3365
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current I
Base current I
Collector power dissipation PC*
CBO
CEO
EBO
C
C(peak)
B
1
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to emitter sustain V
voltage V
Emitter to base breakdown
voltage
Collector cutoff current I
DC current transfer ratio h
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Turn on time t
Storage time t
Fall time t
Note: 1. Pulse test
CEO(sus)
CEX(sus)
V
(BR)EBO
CBO
I
CEO
FE1
h
FE2
V
CE(sat)
V
BE(sat)
on
stg
f
400 — — V IC = 0.2 A, RBE = ∞, L = 100 mH
400 — — V IC = 10 A, IB1 = 2 A, IB2 = –0.6 A,
10 — — V IE = 10 mA, IC = 0
——50µAVCB = 400 V, IE = 0
——50µAVCE = 350 V, RBE = ∞
12 — — VCE = 5.0 V, IC = 5 A*
5—— V
— — 1.0 V IC = 5 A, IB = 1 A*
— — 1.5 V
— — 1.0 µsI
— — 2.5 µsVCC ≅ 150 V
— — 1.0 µs
500 V
400 V
10 V
10 A
20 A
5A
80 W
V
= –5.0 V, L = 180 µH,
BE
Clamped
= 5.0 V, IC = 10 A*
CE
= 10 A, IB1 = –IB2 = 2 A,
C
1
1
1
2
Page 3
2SC3365
Maximum Collector Dissipation Curve
120
80
40
Collector power dissipation Pc (W)
0
50 100 150
Case Temperature T
C
Collector Current Derating Rate
100
80
IS/B Limit Area
(°C)
Area of Safe Operation
100
iC
(peak)
(A)
C
30
10
IC
(Continuous)
3
(max)
DC Operation (T
250 µs
1 ms
PW = 10 ms
1.0
0.3
0.1
Collector Current I
C
= 25°C)
0.03
Ta = 25°C, 1 Shot Pulse
0.01
1 3 10 30 100 300 1,000
Collector to emitter Voltage V
Transient Thermal Resistance
10
3
(°C/W)
j-c
1.0
10 ms–10 s
50 µs
25 µs
CE
(V)
60
40
20
Collector Current derating rate (%)
0
50 100 150
Case temperature TC (°C)
0.3
0.1
0.03
Thermal resistance θ
0.01
0.01 0.1 1.0 10 (s)
10 µs–10 ms
T
= 25°C
C
0.01 0.1 1.0 10 (ms)
Time t
3
Page 4
2SC3365
Reverse Bias Area of Safe Operation
20
16
(A)
C
12
8
IB2 = –0.6 A
Collector Current I
4
0
Collector to emitter Voltage VCE (V)
10
8
(A)
C
6
4
300 V, 20 A
400 V, 10 A
450 V, 2 A
100 200 300 400 500
Typical Transfer Characteristics
1.4
1.6
1.2
1.0
0.8
0.6
0.5
0.4
0.3
0.2
Collector to Emitter Voltage
vs. Base to Emitter Resistance
600
(V)
(BR)CER
IC = 1 mA
500
400
Collector to emitter voltage V
300
100 1 k 10 k 100 k 1 M
Base to emitter resistance R
BE
(Ω)
Typical Output Characteristics
10
TC = 25°C
V
= 5 V
CE
(A)
C
8
6
4
Collector Current I
2
0
Collector to emitter Voltage V
0.1
0.05 A
IB = 0
TC = 25°C
12345
(V)
CE
Collector Current I
2
0
0.4 0.8 1.2 1.6 2.0
Base to emitter voltage V
BE
(V)
4
Page 5
2SC3365
DC Current Transfer Ratio vs.
Collector Current
100
FE
30
75
25
= –25°C
T
10
C
3
DC current transfer ratio h
1
0.01 0.03 0.1 0.3 1.0 3 10
Collector current I
Saturation Voltage vs. Collector Current
10
3
1.0
V
BE (sat)
(V)
(V)
0.3
BE (sat)
CE (sat)
V
V
0.1
V
CE (sat)
0.03
Base to emitter saturation voltage
Collector to emitter saturation voltage
0.01
0.01 0.03 0.1 0.3 1.0 3 10
Collector current I
C
V
CE
(A)
= 5 V
TC = 25°C
l
= 5 l
C
(A)
C
Collector to Emitter Saturation
Voltage vs. Base Current
10
IC = 10 A
3
521
1.0
(V)
0.3
CE (sat)
V
0.1
0.03
Collector to emitter saturation voltage
0.01
TC = 25°C
0.01 0.03 0.1 0.3 1.0 3 10
Base current I
B
(A)
Switching Time vs. Collector Current
10
B
3
t
stg
1.0
t
0.3
0.1
f
t
on
Switching time t (µs)
0.03
0.01
0.01 0.03 0.1 0.3 1.0 3 10
Collector current I
IC = 5 I
~
V
=
CC
B1 =
150 V
(A)
C
–5 I
B2
5
Page 6
2SC3365
Switching Time vs. Case Temperature
5
2
1.0
t
stg
t
f
0.5
0.2
Switching time t (µs)
0.1
0.05
0 25 50 75 100 125
IC = 10 A
I
B1
V
CC
Case temperature T
t
on
= –I
~
C
B2
150 V=
(°C)
= 2 A
6
Page 7
1.6
0.5
15.6 ± 0.3
φ3.2 ± 0.2
1.0
2.0
Unit: mm
4.8 ± 0.2
1.5
5.0 ± 0.3
19.9 ± 0.2
14.9 ± 0.2
0.3
1.4 Max
3.6
2.0
0.9
1.0
1.0 ± 0.2
5.45 ± 0.55.45 ± 0.5
18.0 ± 0.5
2.8
0.6 ± 0.2
Hitachi Code
JEDEC
EIAJ
Weight
(reference value)
TO-3P
—
Conforms
5.0 g
Page 8
Cautions
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for maximum rating, operating supply voltage range, heat radiation characteristics, installation
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failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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