Datasheet 2SC3357 Datasheet (NEC) [ru]

DATA SHEET

NPN SILICON EPITAXIAL TRANSISTOR

POWER MINI MOLD

DESCRIPTION

The 2SC3357 is an NPN silicon epitaxial transistor designed for

low noise amplifier at VHF, UHF and CATV band.

It has large dynamic range and good current characteristic.

FEATURES

•Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V,
IC = 7 mA, f = 1.0 GHz
NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V,
IC = 40 mA, f = 1.0 GHz

•Large PT in Small Package

T

P

: 2 W with 16 cm2 × 0.7 mm Ceramic Substrate.

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current I
Total Power Dissipation PT* 1.2 W
Thermal Resistance R
Junction Temperature T
Storage Temperature T

* mounted on 16 cm

CBO
CEO
EBO

C

th(j-a)

* 62.5 °C/W

j
stg

20 V
12 V

3.0 V

100 mA

150 °C

65 to +150 °C

−

2

× 0.7 mm Ceramic Substrate

SILICON TRANSISTOR

2SC3357

PACKAGE DIMENSIONS

EB

0.42
±0.06

0.8 MIN.

(Unit: mm)

4.5±0.1

1.6±0.2

C

0.42±0.06

1.5

0.47
±0.06

3.0

Term, Connection

E

: Emitter

C

: Collector (Fin)

B

: Base

(SOT-89)

2.5±0.1

1.5±0.1

4.0±0.25

0.41

−0.03
+0.05

Document No. P10357EJ4V1DS00 (4th edition)
Date Published March 1997 N
Printed in Japan

1985©

2SC3357

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS

µ

Collector Cutoff Current I
Emitter Cutoff Current I

CBO

EBO

1.0

1.0
DC Current Gain hFE* 50 120 300 VCE = 10 V, IC = 20 mA
Gain Bandwidth Product f

T

6.5 GHz VCE = 10 V, IC = 20 mA

Feed-Back Capacitance Cre** 0.65 1.0 pF VCB = 10 V, IE = 0, f = 1.0 MHz

2





21

S

Insertion Power Gain

e

9dBV
Noise Figure NF 1.1 dB VCE = 10 V, IC = 7 mA, f = 1.0 GHz
Noise Figure NF 1.8 3.0 dB VCE = 10 V, IC = 40 mA, f = 1.0 GHz

* Pulse Measurement PW ≤ 350 µs, Duty Cycle ≤ 2 %
** The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitnace bridge.

FE

Classification

h

Class RH RF RE

Marking RH RF RE

FE

h

50 to 100 80 to 160 125 to 250

A

CB

= 10 V, IE = 0

V

µ

A

EB

= 1.0 V, IC = 0

V

CE

= 10 V, IC = 20 mA, f = 1.0 GHz

TYPICAL CHARACTERISTICS (TA = 25 °C)

TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE

2.0

Ceramic Substrate

2

16 cm

× 0.7 mm

1.0

-Total Power Dissipation-W

T

P

Free Air

0 50 100 150

th(j-a)

312.5 ˚C/W

R

T

A

-Ambient Temperature-°C

FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE

2

f = 1.0 MHz

1

0.5

-Feed-back Capacitance-pF

re

C

0.3
0 0.5 1 2 5 10 20 30

V

CB

-Collector to Base Voltage-V

2

2SC3357

200

100

50

hFE-DC Current Gain

20

10

1 5 10 500.5

GAIN BANDWIDTH PROUDCT vs.
COLLECTOR CURRENT

10

5.0

3.0

2.0

DC CURRENT GAIN vs.
COLLECTOR CURRENT

C-Collector Current-mA

I

VCE = 10 V

INSERTION GAIN vs.
COLLECTOR CURRENT

15

10

-Insertion Gain-dB

2

5

|S21e|

0

0.5 1 5 10 50 70
I

C-Collector Current-mA

INSERTION GAIN, MAXIMUM GAIN
vs. FREQUENCY

Gmax

20

2

|S21e|

VCE = 10 V
f = 1.0 GHz

1.0

0.5

0.3

0.2

fT-Gain Bandwidth Product-MHz

VCE = 10 V

0.1
0 0.5 10 105.0 30

C-Collector Current-mA

I

NOISE FIGURE vs.

7

6

COLLECTOR CURRENT

VCE = 10 V
f = 1.0 GHz

5

4

3

2

NF-Noise Figure-dB

0

0.5 1 5 10 50 70

C-Collector Current-mA

I

10

-Insertion Gain-dB

2

21e|

Gmax-Maximum Gain-dB

|S

VCE = 10 V

C = 20 mA

I

0

INTERMODULATION DISTORTION vs.
COLLECTOR CURRENT

−80

−70

−60

IM2, IM3 (dB)

−50

−40

−30

20 30

0.1 0.2 0.4 0.6 0.81.0
f-Frequency-GHz

IM3

IM2

VCE = 10 V

0 = 100 dB V/50 Ω

V

at

R

g = Re = 50 Ω

IM2

f = 90 + 100 MHz
f = 2 × 200 − 190 MHz

IM3

µ

40 6050 70

I

C-Collector Current-mA

3

S-PARAMETER

VCE = 10 V, IC = 40 mA, ZO = 50



∠

11

f (MHz)

200
400
600

800
1000
1200
1400
1600
1800
2000

S

0.196

0.103

0.056

0.024

0.008

0.039

0.072

0.102

0.129

0.151

−

−

118.3

−

131.1

−

S

94.4

43.7

−

2.0

13.1

11.8

9.6

8.6

9.8

2SC3357

Ω



11

∠

21

S

13.023

6.852

4.632

3.527

2.854

2.421

2.118

1.887

1.681

1.579

S

102.4

89.2

78.3

75.9

68.7

65.7

59.0

57.1

52.5

51.4

21



∠

12

S

0.043

0.081

0.118

0.152

0.188

0.218

0.255

0.278

0.308

0.339

S

74.5

77.4

77.5

78.0

78.4

75.7

71.7

73.1

71.3

71.8



12

∠

22

S

0.444

0.398

0.399

0.414

0.440

0.461

0.479

0.499

0.515

0.537

−

−

−

−

−

−

−

−

−

−

S

21.1

25.3

26.9

28.9

33.5

33.3

36.3

35.5

38.8

35.9

22

VCE = 10 V, IC = 20 mA, ZO = 50



∠

11

f (MHz)

200

400

600

800
1000
1200
1400
1600
1800
2000

S

0.130

0.073

0.037

0.010

0.024

0.056

0.093

0.124

0.151

0.174

−

109.2

−

134.1

−

146.6

177.1

S

23.7

17.2

13.8

12.0

11.0

13.4

Ω



11

∠

21

S

13.430

6.930

4.690

3.560

2.878

2.439

2.133

1.898

1.693

1.591

S

98.1

87.2

79.4

75.2

68.2

65.4

59.0

57.3

52.9

52.0

21



∠

12

S

0.042

0.081

0.119

0.154

0.191

0.220

0.257

0.280

0.311

0.341

S

79.0

80.6

79.4

79.7

76.5

76.8

72.9

74.0

72.4

72.8



12

∠

22

S

0.403

0.382

0.392

0.412

0.440

0.463

0.483

0.504

0.519

0.542

−

−

−

−

−

−

−

−

−

−

S

22.1

24.7

25.6

27.1

31.9

32.3

35.7

35.3

38.4

36.3

22

4

S

11e

, S

22e

-FREQUENCY

S

21e

-FREQUENCY

CONDITION

VCE = 10 VCONDITION

VCE = 10 V

C

= 20 mA

I

120°

O

T

A

R

E

N

E

G

D

R

0.03

A

0.47

W

O

T

S

H

T

0.02

G

0.48

N

E

L

E

V

A

F

0.01

W

0.49

F

E

O

C

N

0

0

O

I

T

C

D

A

O

0.01

L

0.49

D

R

A

W

0.02

0.48

0.47

90°

f = 0.2 GHz

2SC3357

0.13

0.12

0.37

0.38

90

1.0

0.2

0.4

0.2

0.9

1.0

R

0.2

)

O

0.4

IC = 20 mA

0.2

1.0

−

90

0.12

0.38

0.14

0.36

80

1.2

0.6

0.8

1.0

1.0

0.8

0.6

0.4

f = 20 GHz

1.2

1.4

1.6

0.6

0.8

1.0

1.0

0.8

0.6

0.4

1.2

−

80

0.14

0.13

0.36

0.37

0.15

0.16

0.35

0.34

70

0060

1.4

1.6

1.8

1.8

2.0

3.0

f = 0.2 GHz

IC = 20 mA

f = 2.0 GHz

1.8

1.6

1.4

−

70

0.16

0.15

0.35

0.33

2.0

−

60

0.34

120°

0.17

0.18

0.32

0.19

50

0.31

0.20

40

0.30

0.21

3.0

0.29

30

0.22

4.0

0.28

20

6.0

0.23

0.27

10

10

0.24

0.26

20

50

0.25

10

4.0

5.0

3.0

−40

0.19

−50

2.0

0.18

0.32

0.17

0.33

0.25

20

0

50

0.24

20

0.26

−10

10

0.23

0.27

−20

0.22

5.0

0.28

4.0

−30

0.21

0.29

0.20

0.30

0.31

S

12e

-FREQUENCY

CONDITION

V

CE

= 10 V

C

= 20 mA

I

90°

60°

0.11

0.10

0.39

0.40

0.09

0.41

0.08

0.42

120

0.07

0.43

130

0.06

0.5

0.44

T

N

E

N

0.05

R

0.04

0.46

S

E

E

R

G

E

D

N

I

T

N

0.1

E

I

C

0

E

L

F

E

R

0.1

F

O

E

L

G

N

O

A

T

S

0.2

H

T

160

G

−

N

E

0.03

L

E

V

A

W

0.04

0.46

O

140

P

0.4

M

0.45

CO

E

C

N

A

T

)

C

0.3

150

A

O

E

+JX

R

––––

(

E

V

Z

I
T

I

OS

P

0.2

0.1

0.2

0.3

T

N

E

N

O

P

)

OM

O

C

E

0.3

C

(

150

−JX

––––

N

Z

−

A

T

C

A

E

R

IVE

T

0.4

0.05

A

140

G

−

0.45

NE

0.06

0.5

130

0.44

−

0.6

0.07

0.43

120

0.08

0.42

110

0.7

0.6

0.4

0.5

REACTANCE COMPONENT

f = 0.2 GHz

−

0.7

110

−

0.09

0.41

0.40

100

0.9

0.8

S

11

0.6

0.7

0.8

––––

(

Z

0.8

0.9

100

−

0.10

0.11

0.39

60°

180°

150°

−150°

−120°

f = 2.0 GHz

−90°

S

21e

3 6 9 12 15

−60°

30°

−30°

f = 2.0 GHz

150°

S

12e

30°

f = 0.2 GHz

180°

0°

0.1 0.2 0.3 0.4 0.5

−150°

−120°

−60°

0°

−30°

−90°

5

[MEMO]

2SC3357

6

[MEMO]

2SC3357

7

2SC3357

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consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
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property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
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the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
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"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.

Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
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Anti-radioactive design is not implemented in this product.

M4 96. 5