Page 1
DATA SHEET
DATA SHEET
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise
amplifier at VHF, UHF and CATV band.
It has lange dynamic range and good current characteristic.
FEATURES
• Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
NF = 1.1 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz
• High Power Gain
MAG = 11 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz
ABSOLUTE MAXIMUM RATINGS (TA = 25
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current I
Total Power Dissipation P
Junction Temperature T
Storage Temperature T
CBO
CEO
EBO
C
T
j
stg
C)
20 V
12 V
3.0 V
100 mA
600 mW
150
65 to +150C
C
SILICON TRANSISTOR
2SC3355
PACKAGE DIMENSIONS
in millimeters (inches)
5.2 MAX.
(0.204 MAX.)
5.5 MAX.
(0.216 MAX.)
0.5
(0.02)
14 MIN.
(0.551 MIN.)
1.27
(0.05)
1.
2.
3.
123
Base
Emitter
Collector
2.54
(0.1)
EIAJ
JEDEC
IEC
1.77 MAX.
(0.069 MAX.)
: SC-43B
: TO-92
: PA33
4.2 MAX.
(0.165 MAX.)
ELECTRICAL CHARACTERISTICS (TA = 25
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain Bandwidth Product f
Output Capacitance C
Insertion Power Gain
Noise Figure NF 1.1 dB VCE = 10 V, IC = 7 mA, f = 1.0 GHz
Noise Figure NF 1.8 3.0 dB VCE = 10 V, IC = 40 mA, f = 1.0 GHz
hFE Classification
Class K
Marking K
FE
h
Document No. P10355EJ3V1DS00 (3rd edition)
Date Published March 1997 N
Printed in Japan
50 to 300
C)
CBO
EBO
FE
T
ob
21e
S
50 120 300 VCE = 10 V, IC = 20 mA
6.5 GHz VCE = 10 V, IC = 20 mA
0.65 1.0 pF VCB = 10 V, IE = 0, f = 1.0 MHz
2
9.5 dB VCE = 10 V, IC = 20 mA, f = 1.0 GHz
1.0
1.0
AVCB = 10 V, IE = 0
AVEB = 1.0 V, IC = 0
1985©
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2SC3355
TYPICAL CHARACTERISTICS (TA = 25
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
heat sink
19
1000
With heat sink
3.8
-Total Power Dissipation-mWh
T
P
200
100
500
Free air
0
50
A
-Ambient Temperature-°C
T
100 150
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 10 V
C)
107.8
FEED-BACK CAPACITANCE vs.
2
COLLECTOR TO BASE VOLTAGE
f = 1.0 MHz
1
0.5
-Feed-back Capacitance-pF
re
C
0.3
0 0.5 1 2 5 10 20 30
CB
-Collector to Base Voltage-V
V
INSERTION GAIN vs.
15
COLLECTOR CURRENT
VCE = 10 V
f = 1.0 GHz
10
50
-DC Current Gain
FE
20
10
1 5 10 500.5
C
-Collector Current-mA
I
GAIN BANDWIDTH PROUDCT vs.
10
COLLECTOR CURRENT
5.0
3.0
2.0
1.0
0.5
0.3
-Gain Bandwidth Product-GHz
T
f
0.2
VCE = 10 V
0.1
0 0.5 10 105.0 30
C
-Collector Current-mA
I
-Insertion Gain-dB
2
|
5
21e
|S
0
0.5 1 5 10 50 70
C
-Collector Current-mA
I
INSERTION GAIN, MAXIMUM GAIN
vs. FREQUENCY
G
max
20
2
|S
21e
|
10
-Insertion Gain-dB
2
|
-Maximum Gain-dB
21e
max
G
|S
VCE = 10 V
I
C
0
= 20 mA
0.1 0.2 0.4 0.6 0.810 2
f-Frequency-GHz
2
Page 3
2SC3355
NOISE FIGURE vs.
7
6
5
4
3
2
NF-Noise Figure-dB
1
0
0.5 1 5 10 50 70
COLLECTOR CURRENT
C
-Collector Current-mA
I
S-PARAMETER
VCE = 10 V, IC = 20 mA, ZO = 50
VCE = 10 V
f = 1.0 GHz
−80
−70
(dB)
3
−60
, IM
2
IM
−50
−40
−30
INTERMODULATIOn DISTORTION vs.
COLLECTOR CURRENT
IM
3
IM
2
20 30
VCE = 10 V
V
at
0
+ 100 dB V/50 Ω
g
= Re = 50 Ω
R
IM
2
f = 90 + 100 MHz
IM
3
f = 2 × 200 − 190 MHz
40 6050 70
I
C
-Collector Current-mA
µ
f (MHz)
200
400
600
800
1000
1200
1400
1600
1800
2000
11
S
0.173
0.054
0.013
0.028
0.062
0.091
0.121
0.148
0.171
0.207
S
80.3
77.0
57.9
81.8
82.2
80.7
80.2
80.1
80.0
79.9
VCE = 10 V, IC = 40 mA, ZO = 50
f (MHz)
200
400
600
800
1000
1200
1400
1600
1800
2000
11
S
0.011
0.028
0.027
0.043
0.074
0.098
0.120
0.146
0.171
0.205
S
60.1
42.9
25.1
65.7
75.1
75.6
74.1
75.8
77.2
78.0
11
21
S
13.652
7.217
4.936
3.761
3.094
2.728
2.321
2.183
1.892
1.814
S
103.4
85.1
74.0
62.3
58.3
52.9
44.9
36.4
30.2
21.4
21
12
S
0.041
0.066
0.113
0.144
0.183
0.215
0.240
0.288
0.305
0.344
S
73.8
71.2
69.3
67.0
64.7
61.7
58.7
50.7
46.8
39.1
12
22
S
0.453
0.427
0.428
0.414
0.392
0.377
0.359
0.354
0.345
0.344
S
21.8
26.0
30.8
37.2
43.2
51.4
58.3
67.2
80.0
90.4
22
11
21
S
13.76
7.338
4.996
3.801
3.134
2.759
2.351
2.203
1.910
1.825
S
105.4
82.9
72.7
61.9
57.6
52.4
44.4
36.0
29.9
21.3
21
12
S
0.040
0.069
0.114
0.144
0.183
0.221
0.247
0.291
0.299
0.344
S
73.3
66.7
69.4
67.8
63.4
62.1
55.7
49.6
46.0
39.4
12
22
S
0.421
0.416
0.414
0.406
0.386
0.373
0.356
0.347
0.342
0.335
S
17.5
22.8
28.7
35.7
41.8
49.8
56.3
66.6
78.8
89.6
22
3
Page 4
S-PARAMETER
2SC3355
S
11e
, S
22e
S
21e
-FREQUENCY
-FREQUENCY
120°
VCE = 10 VCONDITION
0.08
0.42
120
0.07
0.43
130
0.06
0.5
0.44
T
N
E
N
0.05
R
O
T
A
R
0.04
E
0.46
N
E
G
D
R
0.03
A
S
0.47
E
W
E
O
R
T
G
S
E
H
D
T
0.02
G
N
0.48
I
N
T
E
L
N
0.1
E
E
I
V
C
A
F
0.01
W
0.49
F
E
O
C
0
N
0
0
O
I
T
C
E
L
F
D
E
A
R
O
0.01
L
0.1
0.49
F
O
D
R
E
A
L
G
W
N
O
0.02
A
T
0.48
S
0.2
H
T
160
G
−
N
E
0.03
L
0.47
E
V
A
W
0.04
0.46
CE
= 10 V
CONDITION V
V
I
C
= 40 mA
O
140
P
0.4
M
0.45
CO
E
C
N
A
T
)
C
0.3
150
A
O
E
+JX
R
––––
(
E
V
Z
I
T
I
OS
P
0.2
0.1
0.2
0.3
T
N
E
N
O
P
)
OM
O
C
E
0.3
C
(
150
−JX
––––
N
Z
−
A
T
C
A
E
R
IVE
T
0.4
0.05
A
140
G
−
0.45
NE
0.06
0.5
130
0.44
−
0.07
0.43
0.08
0.42
0.09
0.41
0.6
0.4
0.6
120
−
0.09
0.41
S
0.11
0.10
0.40
110
0.7
IC = 20 mA
0.5
0.6
REACTANCE COMPONENT
––––
(
Z
0.7
110
−
0.10
0.40
12e
-FREQUENCY
90°
0.2 GHz
60°
0.12
0.38
0.39
100
0.9
0.8
2.0 GHz
0.7
0.8
R
)
O
2.0 GHz
0.8
0.9
100
−
0.11
0.39
120°
90
1.0
0.2
S
11e
0.9
1.0
0.2
1.0
90
0.12
0.38
0.13
0.14
0.37
0.36
80
1.2
0.4
0.6
0.8
1.0
0.8
0.6
0.4
IC = 40 mA
0.2
1.2
1.4
0.2 GHz
0.4
0.6
0.8
1.0
0.8
0.6
0.4
0.2
1.2
−
80
−
0.13
0.37
0.15
0.35
70
1.4
1.0
1.6
1.8
2.0
IC = 40 mA
IC = 20 mA
1.0
S
22e
1.4
−
70
0.15
0.14
0.35
0.36
CONDITION
0.16
0.34
0060
1.6
1.8
3.0
0.2 GHz
1.8
60
1.6
0.16
0.34
90°
0.17
0.33
0.18
0.32
50
0.31
2.0
40
3.0
4.0
5.0
3.0
−50
2.0
0.18
0.32
−
0.17
0.33
0.19
0.20
0.30
30
4.0
6.0
10
10
20
5.0
4.0
−30
0.20
−40
0.19
0.31
CE
= 10 V
I
C
= 40 mA
0.21
0.29
0.22
0.28
20
0.23
0.27
10
0.24
0.26
20
50
0.25
0.25
0
50
0.24
20
0.26
−10
10
0.23
0.27
−20
0.22
0.28
0.21
0.29
0.30
60°
180°
150°
−150°
−120°
2.0 GHz
S
21e
4 8 12 16 20
−90°
−60°
30°
−30°
150°
S
12e
30°
2.0 GHz
180°
0°
0.2 GHz
0.1 0.2 0.3 0.4 0.5
−150°
−120°
−60°
0°
−30°
−90°
4
Page 5
[MEMO]
2SC3355
5
Page 6
[MEMO]
2SC3355
6
Page 7
[MEMO]
2SC3355
7
Page 8
2SC3355
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5
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