Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3352
DESCRIPTION ·
·With TO-220Fa package
·High voltage
·High speed switching
APPLICATIONS
·For high speed switching applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 1.5 A
ICM Collector current-Peak 3.0 A
IB Base current 0.5 A
Collector-base voltage Open emitter 800 V
Collector-emitter voltage Open base 500 V
Emitter-base voltage Open collector 7 V
℃)
TC=25℃
PC Collector power dissipation
=25℃
T
a
Tj
T
stg
Junction temperature 150
Storage temperature -55~150
25
W
2
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3352
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
fT Transition frequency IC=0.2A ; VCE=10V 2.5 MHz
Switching times
ton Turn-on time 1.0
Collector-emitter breakdown voltage IC=10mA , IB=0 500 V
Collector-emitter saturation voltage IC=1A; IB=0.2A 1.0 V
Base-emitter saturation voltage IC=1A; IB=0.2A 1.5 V
Collector cut-off current VCB=800V; IE=0 0.1 mA
Emitter cut-off current VEB=5V; IC=0 0.1 mA
DC current gain IC=0.1A ; VCE=5V 15
DC current gain IC=1A ; VCE=5V 8
μs
t
Storage time 3.0
stg
tf Fall time
2
=1A; IB1=-IB2=0.2A
I
C
V
=200V
CC
μs
1.0
μs
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3352
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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