Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3346
DESCRIPTION
·With TO-220C package
·Complement to type 2SA1329
·High speed switching time
: t
=1.0μs(Typ.)
stg
·Low collector saturation voltage
: V
CE(sat)
APPLICATIONS
·For high current switching applications
PINNING
PIN DESCRIPTION
·
=0.4V(Max.)@IC=6A
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 12 A
IB Base current 2 A
PC Collector dissipation
Collector-base voltage Open emitter 80 V
Collector-emitter voltage Open base 80 V
Emitter-base voltage Open collector 6 V
℃)
T
=25℃
C
40 W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3346
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
fT Transition frequency IC=1A ; VCE=5V 80 MHz
COB Output capacitance IE=0 ; VCB=10V,f=1MHz 220 pF
Switching times
Ton Turn-on time 0.2
t
stg
tf Fall time
Collector-emitter breakdown voltage IC=50mA ; IB=0 80 V
Collector-emitter saturation voltage IC=6A; IB=0.3A 0.2 0.4 V
Base-emitter saturation voltage IC=6A; IB=0.3A 0.9 1.2 V
Collector cut-off current VCB=80V ;IE=0 10
Emitter cut-off current VEB=6V; IC=0 10
DC current gain IC=1A ; VCE=1V 70 240
DC current gain IC=6A ; VCE=1V 40
IB1=-IB2=0.3A;
Storage time 1.0
RL=5Ω,VCC=30V
Pw=20μs ;Duty≤1%
0.2
μA
μA
μs
μs
μs
h
classifications
FE-1
O Y
70-140 120-240
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3346
PACKAGE OUTLINE
3
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
Page 4
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3346
4
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