Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3345
DESCRIPTION
·With TO-220 package
·Complement to type 2SA1328
·Low collector saturation voltage
·High speed switching time
APPLICATIONS
·High current switching applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 12 A
IB Base current 2 A
PC Collector power dissipation
Collector-base voltage Open emitter 60 V
Collector-emitter voltage Open base 50 V
Emitter-base voltage Open collector 6 V
T
=25℃
C
40 W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3345
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Switching times
Collector-emitter breakdown voltage IC=50mA ,IB=0 50 V
(BR)CEO
V
Collector-emitter saturation voltage IC=6A; IB=0.3A 0.4 V
CEsat
V
Base-emitter saturation voltage IC=6A; IB=0.3A 1.2 V
BEsat
I
Collector cut-off current VCB=60V; IE=0 10
CBO
I
Emitter cut-off current VEB=6V; IC=0 10
EBO
h
DC current gain IC=1A ; VCE=1V 70 240
FE-1
h
DC current gain IC=6A ; VCE=1V 40
FE-2
Cob Output capacitance IE=0 ; VCB=10V;f=1MHz 180 pF
fT Transition frequency IC=1A ; VCE=5V 90 MHz
ton Turn-on time 0.2
μA
μA
μs
ts Storage time 1.0
tf Fall time
h
Classifications
FE-1
O Y
70-140 120-240
2
I
=6.0A IB1=- IB2=0.3A
C
RL=5Ω;VCC=30V
0.2
μs
μs
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3345
PACKAGE OUTLINE
3
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
Page 4
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3345
4
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