Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3322
DESCRIPTION
·With TO-3P(I) package
·High voltage
·High speed
APPLICATIONS
·High power switching applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3P(I)) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 5 A
ICM Collector current-peak 10 A
IB Base current 2.5 A
Collector-base voltage Open emitter 900 V
Collector-emitter voltage Open base 800 V
Emitter-base voltage Open collector 7 V
T
PT Total power dissipation
Tj Junction temperature 150
T
Storage temperature -55~150
stg
=25℃
C
80 W
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3322
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
Switching times
Collector-emitter sustaining voltage IC=0.2A ,L=100mH;RBE=∞ 800 V
CEO(SUS)
Base-emitter breakdown voltage IE=10mA; IC=0 7 V
(BR)EBO
V
Collector-emitter saturation voltage IC=1.5A; IB=0.3A 1.0 V
CEsat
V
Base-emitter saturation voltage IC=1.5A; IB=0.3A 1.5 V
BE sat
I
Collector cut-off current VCB=750V; IE=0 100 μA
CBO
I
Collector cut-off current VCE=650V; RBE=∞ 100 μA
CEO
h
DC current gain IC=0.5A ; VCE=5V 15
FE-1
h
DC current gain IC=3A ; VCE=5V 7
FE-2
ton Turn-on time 1.0 μs
I
=3A ; VCC≈250V
t
Storage time 3.0 μs
stg
C
=0.6A; IB2=-1.5A
I
B1
tf Fall time
2
1.0 μs
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3322
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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