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2SC3318
TRIPLE DIFFUSED PLANER TYPE
HIGH VOLTAGE,HIGH SPEED SWITCHING
Features
High voltage,High speed switching
High reliability
Applications
Switching regulators
Ultrasonic generators
High frequency inverters
General purpose power amplifiers
FUJI POWER TRANSISTOR
Outline Drawings
TO-3P
JEDEC EIAJ SC-65
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item Symbol Ratings Unit
Collector-Base voltage VCBO
Collector-Emitter voltage VCEO
Collector-Emitter voltage VCEO(SUS)
Emitter-Base voltage VEBO
Collector current IC
Base current IB
Collector power disspation PC
Operating junction temperature Tj
Storage temperature Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Collector-Base voltage
Collector-Emitter voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector-Base leakage current
Emitter-Base leakage current
D.C. current gain
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
*1
Switching time
Symbol
VCBO
VCEO
VCEO(SUS)
VEBO
ICBO
IEBO
hFE
VCE(Sat)
VBE(Sat)
ton
tstg
tf
500
400
400
7
10
3
80
+150
-65 to +150
Test Conditions
ICBO = 1mA
ICEO = 10mA
IC = 0.2A
IEBO = 1mA
VCBO = 500V
VEBO = 7V
IC = 5A, VCE = 5V
IC = 5A, IB = 1A
IC = 5A, IB1 = 1A
IB2 = -2A, RL = 30 ohm
Pw = 20µs Duty=<2%
V
V
V
V
A
A
W
°C
°C
Min. Typ. Max. Units
500
400
400 -
7-
- 1.0
- 1.0
10
1.0
1.5
0.5
1.5
0.15
V
V
V
V
mA
mA
V
V
µs
µs
µs
Thermal characteristics
Item Symbol Test Conditions
Thermal resistance
Rth(j-c) Junction to case
Min. Typ. Max. Units
1.55 °C/W
1
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2SC3318
Characteristics
Collector-Emitter voltage VCE[V]
FUJI POWER TRANSISTOR
D.C. current gain hFE
Base current IB[A]
Collector Output Characteristics
Saturation voltage VCE(sat), VBE(sat)[V]
Collector current IC[A]
Base and Collector Saturation Voltage
Collector current IC[A]
DC Current Gain
Collector current IC[A]
Collector-Emitter voltage VCE[V]
Safe Operating Area
Switching time ton, tstg, tf [µs]
*1 Switching Time Test Circuit
Collector current IC[A]
Switching Time
2
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