
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3317
DESCRIPTION
·With TO-220C package
·High voltage,high speed switching
·High reliability
APPLICATIONS
·Switching regulators
·Ultrasonic generators
·High frequency inverters
·General purpose power amplifiers
PINNING
PIN DESCRIPTION
·
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 5 A
IB Base current 2 A
PC Collector dissipation TC=25℃ 40 W
Tj Junction temperature 150 ℃
T
stg
Collector-base voltage Open emitter 500 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 7 V
Storage temperature -65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
Thermal resistance junction to case 3.13
th j-C
℃/W

固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3317
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEO(SUS)
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
hFE DC current gai n IC=2A ; VCE=5V 10
Switching times
Collector-emitter breakdown voltage IC=10mA ; IB=0 400 V
Collector-emitter sustaining voltage IC=0.2A ; IB=0 400
Collector-base breakdown voltage IC=1mA ; IE=0 500 V
Emitter-base breakdown voltage IE=1mA ; IB=0 7 V
Collector-emitter saturation voltage IC=2A; IB=0.4A 1.0 V
Base-emitter saturation voltage IC=2A; IB=0.4A 1.5 V
Collector cut-off current VCB=500V ;IE=0 1 mA
Emitter cut-off current VEB=7V; IC=0 1 mA
ton Turn-on time 0.50
t
Storage time 1.50
stg
tf Fall time
2
IC=2.5AIB1=0.5A;
=-1A;RL=60Ω
I
B2
Pw=20μs ;Duty≤2%
μs
μs
0.15
μs

固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3317
PACKAGE OUTLINE
3
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)

固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3317
4