Page 1
Transistor
2SC3312
Silicon NPN epitaxial planer type
For low-frequency and low-noise amplification
Complementary to 2SA1310
Features
■
●
Optimum for high-density mounting.
●
Allowing supply with the radial taping.
●
Low noise voltage NV.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise voltage
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
*
h
FE
V
CE(sat)
V
BE
f
T
NV
Ratings
60
55
7
200
100
300
150
–55 ~ +150
VCB = 20V, IE = 0
VCE = 20V, IB = 0
IC = 10µA, IE = 0
IC = 2mA, IB = 0
IE = 10µA, IC = 0
VCE = 5V, IC = 2mA
IC = 100mA, IB = 10mA
VCE = 1V, IC = 30mA
VCB = 5V, IE = –2mA, f = 200MHz
VCE = 10V, IC = 1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT
Unit
V
V
V
mA
mA
mW
˚C
˚C
Conditions
4.0±0.2
3.0±0.215.6±0.5
marking
123
1:Emitter
2:Collector EIAJ:SC–72
3:Base New S Type Package
min
1.271.27
2.54±0.15
typ
+0.2
0.1
–
0.45
0.7±0.1
max
0.1
1
60
55
7
180
700
1
1
200
150
Unit: mm
2.0±0.2
Unit
µA
µA
V
V
V
V
V
MHz
mV
*
hFE Rank classification
Rank R S T
h
FE
180 ~ 360 260 ~ 520 360 ~ 700
1
Page 2
Transistor
2SC3312
PC — Ta IC — V
500
)
mW
(
400
C
300
200
100
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
V
— I
CE(sat)
)
100
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
0.1 1 10 1000.3 3 30
25˚C
Collector current IC (mA
)
C
IC/IB=10
Ta=75˚C
–25˚C
)
CE
240
200
)
mA
(
160
C
120
80
Collector current I
40
0
012108264
IB=400µA
Collector to emitter voltage VCE (V
hFE — I
C
1000
FE
800
600
Ta=75˚C
400
200
25˚C
–25˚C
Forward current transfer ratio h
0
0.1 1 10 1000.3 3 30
Collector current IC (mA
Ta=25˚C
350µA
330µA
250µA
200µA
150µA
100µA
50µA
VCE=5V
)
120
100
)
mA
(
80
C
60
40
Collector current I
20
0
02.01.60.4 1.20.8
)
Base to emitter voltage VBE (V
400
350
)
MHz
300
(
T
250
200
150
100
Transition frequency f
50
0
– 0.1 –1 –10 –100– 0.3 –3 –30
IC — V
BE
25˚C
Ta=75˚C –25˚C
fT — I
VCE=5V
E
VCB=5V
Ta=25˚C
Emitter current IE (mA
)
)
Cob — V
5
)
pF
(
4
ob
3
2
1
Collector output capacitance C
0
1 3 10 30 100
Collector to base voltage VCB (V
2
CB
IE=0
f=1MHz
Ta=25˚C
NV — I
240
200
)
mV
(
160
120
80
Noise voltage NV
40
0
0.01 0.03 0.1 0.3 1
)
Collector current IC (mA
C
ICE=10V
G
=80dB
V
Function=FLAT
Ta=25˚C
Rg=100kΩ
22kΩ
4.1kΩ
)
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