Page 1
Transistor
2SC3311A
Silicon NPN epitaxial planer type
For low-frequency amplification
Complementary to 2SA1309A
Features
■
●
Optimum for high-density mounting.
●
Allowing supply with the radial taping.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
*
h
FE
V
CE(sat)
f
T
C
ob
Ratings
60
50
7
200
100
300
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
Conditions
VCB = 10V, IE = 0
VCE = 10V, IB = 0
IC = 10µA, IE = 0
IC = 2mA, IB = 0
IE = 10µA, IC = 0
VCE = 10V, IC = 2mA
IC = 100mA, IB = 10mA
VCB = 10V, IE = –2mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
4.0±0.2
3.0±0.215.6±0.5
marking
123
1:Emitter
2:Collector EIAJ:SC–72
3:Base New S Type Package
min
1.271.27
2.54±0.15
typ
+0.2
0.1
–
0.45
0.7±0.1
max
0.1
1
60
50
7
160
0.1
460
0.3
150
3.5
Unit: mm
2.0±0.2
Unit
µA
µA
V
V
V
V
MHz
pF
*
hFE Rank classification
Rank Q R S
h
FE
160 ~ 260 210 ~ 340 290 ~ 460
1
Page 2
Transistor
2SC3311A
PC — Ta IC — V
500
)
mW
(
400
C
300
200
100
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
V
— I
CE(sat)
)
100
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
0.1 1 10 1000.3 3 30
25˚C
Collector current IC (mA
)
C
IC/IB=10
Ta=75˚C
–25˚C
)
CE
60
50
)
mA
(
40
C
30
20
Collector current I
10
0
012108264
IB=160µA
Collector to emitter voltage VCE (V
hFE — I
C
600
FE
500
400
300
200
100
Forward current transfer ratio h
0
0.1 1 10 1000.3 3 30
VCE=10V
Ta=75˚C
–25˚C
Collector current IC (mA
Ta=25˚C
140µA
120µA
100µA
80µA
60µA
40µA
20µA
25˚C
)
200
160
)
mA
(
C
120
80
Collector current I
40
0
02.01.60.4 1.20.8
)
Base to emitter voltage VBE (V
300
VCE=10V
f=100MHz
Ta=25˚C
)
250
MHz
(
T
200
150
100
50
Transition frequency f
0
– 0.1 –1 –10 –100– 0.3 –3 –30
IC — V
BE
VCE=10V
25˚C
Ta=75˚C
–25˚C
fT — I
E
Emitter current IE (mA
)
)
)
pF
(
Cob — V
10
8
ob
6
4
2
CB
Collector output capacitance C
0
1 3 10 30 100
Collector to base voltage VCB (V
2
IE=0
f=1MHz
Ta=25˚C
)
mV
(
Noise voltage NV
)
NV — I
C
240
200
160
120
80
40
0
1 30 100 300 1000
VCE=10V
Function=FLAT
Ta=25˚C
Rg=100kΩ
20kΩ
4.7kΩ
Collector current IC (µA
)
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