Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3310
DESCRIPTION ·
·With TO-220Fa package
·High collector breakdown voltage
·Excellent Switching times
APPLICATIONS
·Switching regulator
·High speed DC-DC converter
·High voltage switching
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) 5 A
ICM Collector current (pulse) 7 A
IB Base current (DC) 1 A
PC Collector power dissipation
Collector-base voltage Open emitter 500 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 7 V
℃)
Ta=25℃ 2
=25℃ 30
T
C
W
Tj
T
stg
Junction temperature 150 ℃
Storage temperature -55~150 ℃
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固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3310
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
Switching times
Collector-base breakdown voltage IC=1mA ;IE=0 500 V
(BR)CBO
Collector-emitter breakdown voltage IC=10mA ;IB=0 400 V
(BR)CEO
V
Collector-emitter saturation voltage IC=5A ;IB=1A 1.0 V
CEsat
V
Base-emitter saturation voltage IC=5A ;IB=1A 1.5 V
BEsat
I
Collector cut-off current VCB=400V; IE=0 100
CBO
I
Emitter cut-off current VEB=7V; IC=0 1 mA
EBO
h
DC current gain IC=3A ; VCE=5V 12
FE-1
h
DC current gain IC=5A ; VCE=5V 8
FE-2
Tr
Rise time 1.0
μA
μs
ts
tf
Storage time 2.5
Fall time
2
I
=4A ;IB1=-IB2=0.4A
C
≈200V;RL=10Ω
V
CC
μs
1.0
μs
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3310
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
Page 4
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3310
4
Page 5
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3310
5
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